Òxids de porta irradiats en tecnologies CMOS sub-0,1\mum: caracterització a escala nanomètrica i impacte en les prestacions de dispositius i circuits

Project Details


The main objective of the proposed project, i.e. the investigation of the ionising radiation effects on MOS devices, can be divided in two seccondary objectives: 1. Impact of radiation on microelectronic devices/circuits: characterization and modelling. 2. Nanometer scale characterization of the radiation effects on the gate oxide reliability of MOS structures
Effective start/end date1/01/0531/03/07


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