The main objective of the proposed project, i.e. the investigation of the ionising radiation effects on MOS devices, can be divided in two seccondary objectives: 1. Impact of radiation on microelectronic devices/circuits: characterization and modelling. 2. Nanometer scale characterization of the radiation effects on the gate oxide reliability of MOS structures
|Effective start/end date||1/01/05 → 31/03/07|
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