Òxids de porta irradiats en tecnologies CMOS sub-0,1\mum: caracterització a escala nanomètrica i impacte en les prestacions de dispositius i circuits

Project Details

Description

The main objective of the proposed project, i.e. the investigation of the ionising radiation effects on MOS devices, can be divided in two seccondary objectives:
1. Impact of radiation on microelectronic devices/circuits: characterization and modelling.
2. Nanometer scale characterization of the radiation effects on the gate oxide reliability of MOS structures
StatusFinished
Effective start/end date1/01/0531/03/07

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