Physics
Oxide
100%
Electric Potential
73%
Dielectrics
53%
Model
48%
Nanoscale
39%
Memory
33%
Independent Variables
32%
Insulators
30%
Atomic Force Microscopy
29%
Reliability
28%
Silicon
27%
Resistive Switching
26%
Area
26%
Temperature
25%
Performance
21%
Metal
20%
Utilization
19%
Semiconductor
19%
Standard
18%
Frequencies
18%
Tunnel
18%
Variations
17%
Events
17%
Simulation
16%
Oxidation
15%
Value
14%
Region
14%
Resonant Tunneling
13%
Revisions
13%
Roughness
13%
Statics
12%
Grain Boundaries
11%
Physics
11%
Polycrystalline
11%
Failure
10%
Scanning Tunneling Microscopy
10%
Information
10%
Position (Location)
10%
Regimes
10%
Wear
9%
Green's Functions
9%
Growth
8%
Monte Carlo
8%
Transients
8%
Injection
8%
Frequency Dependence
7%
Electric Fields
7%
Fabrication
7%
Impact
7%
Electrical Breakdown
7%
Engineering
Dielectrics
55%
Nanoscale
54%
Characteristics
40%
Conductive
40%
Electric Potential
39%
Gate Oxide
33%
Networks (Circuits)
33%
Gate Dielectric
32%
Reliability
32%
Atomic Force Microscope
30%
Gate Stack
29%
Metal-Oxide-Semiconductor Field-Effect Transistor
26%
Nanometre
25%
Surfaces
24%
Models
21%
Properties
20%
Applications
20%
Resistive
18%
Mechanisms
18%
Conductive Atomic Force Microscopy
18%
Tunneling
17%
Switching
16%
Roughness
15%
Scanning Tunneling Microscope
14%
Sio2 Layer
14%
Measurement
13%
Defects
13%
Temperature
13%
Simulators
13%
Recovery
12%
Sio2 Film
12%
Functionality
12%
Thickness
11%
Performance
11%
Simulation
9%
Density
9%
Transistor
8%
SPICE
8%
Stress Condition
8%
Experiments
8%
Current Mirror
8%
Polycrystalline
8%
Demonstrates
8%
Fluctuations
7%
Silicon Surface
7%
Reversibility
7%
Oxide Thickness
7%
Silicon Nanocrystal
7%
Current Limit
7%
Grain Boundary
7%
Earth and Planetary Sciences
Oxide
92%
Dielectrics
44%
Electric Potential
35%
Area
31%
Show
31%
Model
30%
Microscope
30%
Event
26%
Characterization
23%
Stack
23%
Condition
22%
Parameter
22%
Investigation
21%
Reliability
18%
Tip
17%
Trap
16%
State
16%
Field Effect Transistor
15%
Simulation
15%
Time
15%
Atomic Force Microscopy
15%
Metal
14%
Roughness
14%
Leakage
14%
Capacitor
12%
Sample
12%
Silicon
12%
Datum
11%
Defect
10%
Value
10%
Thickness
10%
Electron
9%
Switching
9%
Statistical Distribution
9%
Isolators
9%
Observation
9%
Electrode
8%
Revision
8%
Order
8%
Rate
8%
Dimension
8%
Failure
8%
Current Density
8%
Exhibit
8%
Substrate
8%
Position (Location)
8%
Scanning
8%
Damage
7%
Behavior
7%
Resonant Tunneling
7%