Keyphrases
Annealing Temperature
6%
Atomic Force Microscopy
14%
Channel Hot Carrier Degradation
7%
Charge Trapping
8%
Conductive AFM
7%
Conductive Atomic Force Microscopy (C-AFM)
100%
Conductive Filament
11%
Crystallization
9%
Device Level
27%
Dielectric
10%
Dielectric Breakdown
13%
Electrical Characteristics
12%
Electrical Characterization
32%
Electrical Performance
10%
Electrical Properties
25%
Electrical Stress
21%
Gate Dielectric
15%
Gate Oxide
25%
Gate Stack
20%
Grain Boundary
23%
Graphene
13%
Graphene Sheets
6%
Hafnium Oxide
9%
HfO2
42%
High-k Dielectric
18%
III-V Materials
7%
Inkjet Print
6%
Interfacial Layer
7%
Memory Cell
7%
Metal Oxide Semiconductor
13%
Metal-oxide-semiconductor Devices
7%
Metal-oxide-semiconductor Structure
8%
Microscopic Techniques
9%
MIS Structure
6%
MOS Devices
15%
MOSFET
26%
Nanometer Scale
17%
Oxide Breakdown
9%
Oxides
13%
Resistive Random Access Memory (ReRAM)
20%
Resistive Switching
25%
Scanning Kelvin Probe Force Microscopy (SKPFM)
10%
Silica
36%
Silicon Nanocrystals
6%
SiO2 Film
23%
SiO2 Layer
8%
Switching Phenomenon
6%
Threading Dislocation
11%
Ultrathin
16%
Work Function Fluctuation
6%
Engineering
Atomic Force Microscope
60%
Atomic Force Microscopy
15%
Conductive
64%
Conductive Atomic Force Microscopy
38%
Conductive Filament
7%
Current-Voltage Characteristic
9%
Dielectrics
36%
Electrical Conductivity
6%
Electrical Performance
6%
Gate Dielectric
11%
Gate Oxide
24%
Gate Stack
18%
Grain Boundaries
11%
Graphene
7%
Metal Oxide Semiconductor
22%
Metal-Oxide-Semiconductor Field-Effect Transistor
24%
Nanometre
23%
Nanoscale
65%
Negative Charge
5%
Nonvolatile Memory
6%
Polycrystalline
17%
Resistive
17%
Semiconductor Device
7%
Semiconductor Structure
5%
Silicon Dioxide
30%
Silicon Nanocrystal
6%
Sio2 Film
19%
Sio2 Layer
9%
Stress Induced Leakage Current
6%
Thin-Film Transistor
6%
Threading Dislocation
9%
Material Science
Al2O3
5%
Annealing
8%
Charge Trapping
9%
Current-Voltage Characteristic
7%
Density
15%
Dielectric Material
51%
Electrical Breakdown
13%
Electrical Property
14%
Electronic Circuit
11%
Film
31%
Grain Boundaries
25%
Graphene
22%
Hafnium
12%
III-V Semiconductor
9%
Lattice Mismatch
8%
Metal Oxide
26%
Metal-Insulator-Metal Structure
6%
Metal-Oxide-Semiconductor Field-Effect Transistor
17%
Morphology
7%
Oxide Compound
61%
Oxide Semiconductor
23%
Resistive Random-Access Memory
8%
Semiconductor Device
7%
Semiconductor Structure
11%
Silicon
16%
