INIS
atomic force microscopy
100%
nanostructures
90%
devices
82%
oxides
70%
breakdown
60%
dielectrics
54%
metals
47%
stacks
40%
layers
38%
semiconductor materials
32%
levels
32%
films
31%
silicon oxides
28%
voltage
28%
charges
27%
polycrystals
25%
performance
24%
grain boundaries
24%
graphene
20%
electrical properties
20%
reliability
19%
afm
18%
simulation
18%
defects
17%
applications
17%
hafnium oxides
17%
mosfet
16%
silicon
16%
density
16%
filaments
14%
dislocations
12%
trapping
12%
implementation
11%
annealing
11%
evaluation
10%
tin
10%
leakage current
10%
substrates
10%
traps
10%
data
10%
randomness
9%
tools
9%
resolution
9%
crystallization
8%
transistors
8%
memory devices
8%
electrodes
7%
fluctuations
7%
hot channel
7%
nanocrystals
7%
Engineering
Conductive
64%
Nanoscale
64%
Atomic Force Microscope
60%
Dielectrics
32%
Conductive Atomic Force Microscopy
32%
Gate Oxide
24%
Metal Oxide Semiconductor
23%
Nanometre
23%
Sio2 Film
20%
Gate Stack
20%
Resistive
18%
Metal-Oxide-Semiconductor Field-Effect Transistor
17%
Atomic Force Microscopy
16%
Grain Boundary
12%
Polycrystalline
11%
Gate Dielectric
10%
Threading Dislocation
10%
Current-Voltage Characteristic
9%
Sio2 Layer
9%
Conductive Filament
7%
Electrical Performance
7%
Graphene
7%
Semiconductor Device
7%
Silicon Nanocrystal
6%
Thin-Film Transistor
6%
Stress Induced Leakage Current
6%
Simulators
6%
Semiconductor Structure
5%
Negative Charge
5%
Defects
5%
Tunnel Construction
5%
Gate Electrode
5%
Interface Trap
5%
Electric Power Utilization
5%
Structural Damage
5%
Keyphrases
Conductive Atomic Force Microscopy (C-AFM)
11%
Resistive Switching
8%
Device Level
7%
SiO2 Film
6%
Ultrathin
6%
HfO2
6%
Scanning Kelvin Probe Force Microscopy (SKPFM)
6%
Silica
6%
Electrical Stress
6%
Charge Trapping
5%
Stress Induced Leakage Current
5%
Nanoscale Characterization
5%
