Projects per year
Personal profile
Education/Academic qualification
Ph. D., Universitat Autònoma de Barcelona (UAB)
Award Date: 8 Apr 2003
Degree, Universitat Autònoma de Barcelona (UAB)
Award Date: 15 Jun 1997
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Dive into the research topics where Marc Porti Pujal is active. These topic labels come from the works of this person. Together they form a unique fingerprint.
- 11 Similar Profiles
Projects
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THE VARIABILITY CHALLENGE IN NANO-CMOS AND BEYOND-CMOS: HARNESSING DEVICES AND MATERIALS FOR MITIGATION AND EXPLOITATION (VIGILANT-UAB)
Rodriguez Martinez, R., Nafria Maqueda, M., Diaz Fortuny, J., Pedreira Rincon, G., Pedro Puig, M., Ruiz Flores, A., Salvador Aguilera, E., Aymerich Humet, F. J., Crespo Yepes, A., Martin Martinez, J. & Porti Pujal, M.
1/06/20 → 31/05/23
Project
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Dispositivos, circuitos y arquitecturas fiables y de bajo consumo para iot
Nafria Maqueda, M., Porti Pujal, M., Diaz Fortuny, J., Pedro Puig, M., Ruiz Flores, A., Aymerich Humet, F. J., Crespo Yepes, A., Martin Martinez, J. & Rodriguez Martinez, R.
30/12/16 → 29/06/21
Project
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Variabilidad y fiabilidad en dispositivos electrónicos avanzados: de la nanoescala al circuito (VARENAC)
Nafria Maqueda, M., Amat Bertran, E., Ayala Cintas, N., Aymerich Humet, F. J., Bayerl , A., Crespo Yepes, A., Iglesias Santiso, V., Lanza Martínez, M., Martin Martinez, J., Porti Pujal, M. & Rodriguez Martinez, R.
1/01/11 → 31/12/14
Project
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Advanced CMOS devices based in alternative dielectrics: performance and reliability
Nafria Maqueda, M., Bayerl , A., Martin Martinez, J., Aguilera Martínez, L., Benstetter, Günther, Lanza Martínez, M., Porti Pujal, M. & Rodriguez Martinez, R.
1/01/08 → 31/03/10
Project
Research output
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Combined nanoscale KPFM characterization and device simulation for the evaluation of the MOSFET variability related to metal gate workfunction fluctuations
Ruiz, A., Seoane, N., Claramunt, S., García-Loureiro, A., Porti, M. & Nafria, M., 15 Aug 2019, In: Microelectronic Engineering. 216, 111048.Research output: Contribution to journal › Article › Research
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Low-power, high-performance, non-volatile inkjet-printed HfO<inf>2</inf>-based resistive random access memory: From device to nanoscale characterization
Vescio, G., Martín, G., Crespo-Yepes, A., Claramunt, S., Alonso, D., Lopez-Vidrier, J., Estrade, S., Porti, M., Rodríguez, R., Peiro, F., Cornet, A., Cirera, A. & Nafría, M., 1 Jan 2019, In: ACS Applied Materials and Interfaces. 11, p. 23659-23666Research output: Contribution to journal › Article › Research
4 Citations (Scopus) -
Workfunction fluctuations in polycrystalline TiN observed with KPFM and their impact on MOSFETs variability
Ruiz, A., Seoane, N., Claramunt, S., Garciá-Loureiro, A., Porti, M., Couso, C., Martin-Martinez, J. & Nafria, M., 4 Mar 2019, In: Applied Physics Letters. 114, 093502.Research output: Contribution to journal › Article › Research
6 Citations (Scopus) -
Performance and power consumption trade-off in UTBB FDSOI inverters operated at NTV for IoT applications
Couso, C., Martin-Martinez, J., Porti, M. & Nafría, M., 1 Jan 2018, In: IEEE Journal of the Electron Devices Society. 6, 1, p. 55-62Research output: Contribution to journal › Article › Research › peer-review
4 Citations (Scopus) -
Efficient methodology to extract interface traps parameters for TCAD simulations
Couso, C., Martin-Martinez, J., Porti, M., Nafria, M. & Aymerich, X., 25 Jun 2017, In: Microelectronic Engineering. 178, p. 66-70Research output: Contribution to journal › Article › Research › peer-review
3 Citations (Scopus)