Keyphrases
HfO2
70%
Resistive Random Access Memory (ReRAM)
47%
Oxides
46%
Soft Breakdown
44%
Resistive Switching
43%
SiO2 Film
33%
Conductive Filament
33%
Ultrathin
32%
Oxide Breakdown
32%
Silica
31%
Resistive Switching Device
31%
Dielectric Breakdown
29%
Conductance
27%
Electron Transport
25%
Memdiode
24%
Memory Device
24%
Post-breakdown
23%
Conduction Characteristics
22%
Quantum Point Contact
21%
Hard Breakdown
21%
Compact Model
20%
Capacitors
20%
Current-voltage Characteristics
20%
Ultra-thin Gate Oxide
20%
Time to Breakdown
19%
Memristor
19%
Set Voltage
19%
Electrical Stress
18%
SPICE Model
17%
I-V Characteristics
17%
Resonant Tunneling Diode
16%
Breakdown Statistics
16%
Bohm
16%
Thin Oxides
16%
Constant Voltage Stress
16%
Weibull Slope
16%
Gate Dielectric
15%
MOS Devices
15%
Memristive Devices
14%
Gate Oxide
14%
Current-voltage (I-V) Characteristics
14%
Cell-based
14%
Breakdown Path
14%
MOS Structure
14%
Stress Conditions
14%
Constant Voltage
13%
Ultrathin Oxide
13%
Tunneling
13%
Dielectric Film
13%
Bipolar Resistive Switching
12%
Engineering
Resistive
100%
Dielectrics
55%
Gate Oxide
47%
Current-Voltage Characteristic
44%
Silicon Dioxide
41%
Constant Voltage
31%
Sio2 Film
29%
Resistive Random Access Memory
28%
Oxide Thickness
25%
Conductive Filament
24%
Contact Point
24%
Gate Dielectric
21%
Experimental Result
20%
Metal-Insulator-Metal
20%
Random Access Memory Device
19%
Dielectric Films
18%
Metal-Oxide-Semiconductor Field-Effect Transistor
18%
Tunnel Construction
17%
SPICE
17%
Stress Condition
16%
Series Resistance
15%
Semiconductor Structure
14%
Metal Oxide Semiconductor
13%
Failure Event
13%
Oxide Layer
13%
Thermal Effect
12%
Stress Induced Leakage Current
12%
Dynamic Stress
12%
Conductive
12%
Energy Engineering
11%
Oxide Film
11%
Failure Mode
11%
Resonant Tunneling
11%
Power Law Model
10%
Spatial Distribution
10%
Nanoscale
9%
Experimental Observation
9%
Reliability Assessment
9%
Transients
8%
Sio2 Layer
8%
Schottky Barrier
8%
Equivalent Circuit
8%
High Resistance State
7%
Gate Voltage
7%
Characteristic Time
7%
Temperature Dependence
7%
Contact Model
7%
Conductive Path
7%
Parallel Resistance
7%
Memory State
6%
