Projects per year
Personal profile
Education/Academic qualification
Ph. D., Universitat Autònoma de Barcelona (UAB)
Award Date: 1 Jun 1989
Degree, Universitat Autònoma de Barcelona (UAB)
Award Date: 1 Jun 1986
External positions
Titular Universidad Interino, Universitat Autònoma de Barcelona (UAB)
16 Sep 1992 → 1 Oct 1993Ayudante Escuela Universitaria, Universitat Autònoma de Barcelona (UAB)
1 Oct 1991 → 15 Sep 1992Becario Postdoctoral del CSIC, Università degli Studi di Bologna - Alma Mater Studiorum
1 Jan 1989 → 31 Dec 1989Becario Plan Nacional Microelectrónica, Centro Nacional de Microelectrónica CNM-CSIC
1 Apr 1987 → 31 Dec 1989Becario Promoción General Conocimiento, Universitat Autònoma de Barcelona (UAB)
1 Mar 1987 → 31 Mar 1987Ayudante Escuela Universitaria, Universitat Autònoma de Barcelona (UAB)
1 Oct 1986 → 28 Feb 1987Fingerprint
Dive into the research topics where Jorge Francisco Suñe Tarruella is active. These topic labels come from the works of this person. Together they form a unique fingerprint.
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MEMQuD: Memristive devices as quantum standard for nanometrology
Miranda Castellano, E. A. & Suñe Tarruella, J. F.
1/06/21 → 31/05/24
Project
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WAKeMeUP: Wafers for Automotive and other Key applications using Memories, embedded in Ulsi Processors (WAKeMeUP)
Suñe Tarruella, J. F., Lopez Vicario, J., Miranda Castellano, E. A., Morell Perez, A., Morén Núñez, C. P., Muñoz Gorriz, J., Pedro Puig, M., Rodríguez Fernández, A. & Serrano Garcia, J.
1/05/18 → 30/04/21
Project
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Analysis and simulation of the multiple resistive switching modes occurring in HfO <inf>x</inf> -based resistive random access memories using memdiodes
Petzold, S., Miranda, E., Sharath, S. U., Muñoz-Gorriz, J., Vogel, T., Piros, E., Kaiser, N., Eilhardt, R., Zintler, A., Molina-Luna, L., Suñé, J. & Alff, L., 21 Jun 2019, In: Journal of applied physics. 125, 234503.Research output: Contribution to journal › Article › Research
5 Citations (Scopus) -
An improved analytical model for the statistics of SET emergence point in HfO <inf>2</inf> memristive device
Xiang, D., Zhang, R., Li, Y., Ye, C., Miranda, E., Suñé, J. & Long, S., 1 Feb 2019, In: AIP Advances. 9, 025118.Research output: Contribution to journal › Article › Research
1 Citation (Scopus) -
Assessing the correlation between location and size of catastrophic breakdown events in high-k mim capacitors
Munoz-Gorriz, J., Blachier, D., Reimbold, G., Campabadal, F., Sune, J., Monaghan, S., Cherkaoui, K., Hurley, P. K. & Miranda, E., 1 Jun 2019, In: IEEE Transactions on Device and Materials Reliability. 19, p. 452-460 8715659.Research output: Contribution to journal › Article › Research
2 Citations (Scopus) -
Detection of inhibitory effects in the generation of breakdown spots in HfO<inf>2</inf>-based MIM devices
Muñoz-Gorriz, J., Monaghan, S., Cherkaoui, K., Suñé, J., Hurley, P. K. & Miranda, E., 15 Jul 2019, In: Microelectronic Engineering. 215, 111023.Research output: Contribution to journal › Article › Research
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Engineering Oxygen Migration for Homogeneous Volume Resistive Switching in 3-Terminal Devices
Gonzalez-Rosillo, J. C., Ortega-Hernandez, R., Arndt, B., Coll, M., Dittmann, R., Obradors, X., Palau, A., Suñe, J. & Puig, T., 1 Sep 2019, In: Advanced Electronic Materials. 5, 1800629.Research output: Contribution to journal › Article › Research
7 Citations (Scopus)