Projects per year
Personal profile
Education/Academic qualification
Degree, Llicenciat, Universitat Autònoma de Barcelona (UAB)
Award Date: 1 Jan 2004
External positions
Becari, Transports Metropolitans de Barcelona (TMB)
15 Jan 2004 → 15 Sept 2004
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Collaborations and top research areas from the last five years
Projects
- 2 Finished
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Variabilidad y fiabilidad en dispositivos electrónicos avanzados: de la nanoescala al circuito (VARENAC)
Nafria Maqueda, M. (Principal Investigator), Amat Bertran, E. (Investigator), Ayala Cintas, N. (Investigator), Aymerich Humet, F. J. (Investigator), Bayerl , A. (Investigator), Crespo Yepes, A. (Investigator), Iglesias Santiso, V. (Investigator), Lanza Martínez, M. (Investigator), Martin Martinez, J. (Investigator), Porti Pujal, M. (Investigator), Rodriguez Martinez, R. (Investigator), Velayudhan , V. (Investigator), Moras Albero, M. (Investigator), Maestro Izquierdo, M. (Investigator), Couso Fontanillo, C. (Investigator), Diaz Fortuny, J. (Others) & Claramunt Ruiz, S. (Investigator)
Ministerio de Ciencia e Innovación (MICINN)
1/01/11 → 31/12/14
Project: Research Projects and Other Grants
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Prestaciones y Fiabilidad de Dispositivos y Circuitos CMOS Nanoelectrónicos basados en Materiales Alternativos
Nafria Maqueda, M. (Principal Investigator), Martin Martinez, J. (Scholar), Aguilera Martínez, L. (Investigator), Amat Bertran, E. (Investigator), Aymerich Humet, F. J. (Investigator), Boix Gargallo, J. (Investigator), Lanza Martínez, M. (Investigator), Porti Pujal, M. (Investigator), Raul Fernandez Garcia (Investigator) & Rodriguez Martinez, R. (Investigator)
Ministerio de Educación y Ciencia (MEC)
1/10/07 → 30/09/10
Project: Research Projects and Other Grants
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Random Telegraph Noise and Bias Temperature Instabilities statistical characterization of Ω-gate FDSOI devices at low voltages
Pedreira, G., Martin-Martinez, J., Crespo-Yepes, A., Amat, E., Rodriguez, R. & Nafria, M., Nov 2023, In: SOLID-STATE ELECTRONICS. 209, 4 p., 108735.Research output: Contribution to journal › Article › Research › peer-review
Open Access1 Downloads (Pure) -
A comprehensive study of channel hot-carrier degradation in short channel MOSFETs with high-k dielectrics
Amat, E., Kauerauf, T., Rodriguez, R., Nafria, M., Aymerich, X., Degraeve, R. & Groeseneken, G., 1 Jan 2013, In: Microelectronic Engineering. 103, p. 144-149Research output: Contribution to journal › Article › Research › peer-review
19 Link opens in a new tab Citations (Scopus) -
Gate voltage influence on the channel hot-carrier degradation of high-κ-Based Devices
Amat, E., Kauerauf, T., Degraeve, R., Rodríguez, R., Nafria, M., Aymerich, X. & Groeseneken, G., 1 Mar 2011, In: IEEE Transactions on Device and Materials Reliability. 11, 1, p. 92-97 5638616.Research output: Contribution to journal › Article › Research › peer-review
16 Link opens in a new tab Citations (Scopus) -
Channel hot-carrier degradation in pMOS and nMOS short channel transistors with high-k dielectric stack
Amat, E., Kauerauf, T., Degraeve, R., Rodríguez, R., Nafría, M., Aymerich, X. & Groeseneken, G., 1 Jan 2010, In: Microelectronic Engineering. 87, p. 47-50Research output: Contribution to journal › Article › Research › peer-review
40 Link opens in a new tab Citations (Scopus) -
Channel hot-carrier degradation on strained MOSFETs with embedded SiGe or SiC Source/Drain
Amat, E., Rodríguez, R., González, M. B., Martín-Martínez, J., Nafría, M., Aymerich, X., Machkaoutsan, V., Bauer, M., Verheyen, P. & Simoen, E., 13 Dec 2010, 3 p. (ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings)Research output: Book/Report › Proceeding › Research › peer-review
7 Link opens in a new tab Citations (Scopus)
Thesis
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Degradació del stack dielèctric de porta SiO2/high-K en dispositius MOS: BTI i portadors calents.
Amat Bertran, E. (Author), Rodriguez Martinez, R. (Director), 10 Dec 2009Student thesis: Doctoral thesis