Projects per year
Personal profile
Education/Academic qualification
Degree, Llicenciat, Universitat Autònoma de Barcelona (UAB)
Award Date: 1 Jan 2004
External positions
Becari, Transports Metropolitans de Barcelona
15 Jan 2004 → 15 Sept 2004
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Collaborations and top research areas from the last five years
Projects
- 2 Finished
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Variabilidad y fiabilidad en dispositivos electrónicos avanzados: de la nanoescala al circuito (VARENAC)
Nafria Maqueda, M., Amat Bertran, E., Ayala Cintas, N., Aymerich Humet, F. J., Bayerl , A., Crespo Yepes, A., Iglesias Santiso, V., Lanza Martínez, M., Martin Martinez, J., Porti Pujal, M., Rodriguez Martinez, R., Velayudhan , V., Moras Albero, M., Maestro Izquierdo, M., Couso Fontanillo, C., Diaz Fortuny, J. & Claramunt Ruiz, S.
1/01/11 → 31/12/14
Project: Research Projects and Other Grants
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Prestaciones y Fiabilidad de Dispositivos y Circuitos CMOS Nanoelectrónicos basados en Materiales Alternativos
Nafria Maqueda, M., Martin Martinez, J., Aguilera Martínez, L., Amat Bertran, E., Aymerich Humet, F. J., Boix Gargallo, J., Lanza Martínez, M., Porti Pujal, M., Rodriguez Martinez, R. & Raul Fernandez Garcia
1/10/07 → 30/09/10
Project: Research Projects and Other Grants
Research output
- 13 Article
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Random Telegraph Noise and Bias Temperature Instabilities statistical characterization of Ω-gate FDSOI devices at low voltages
Pedreira, G., Martin-Martinez, J., Crespo-Yepes, A., Amat, E., Rodriguez, R. & Nafria, M., Nov 2023, In: SOLID-STATE ELECTRONICS. 209, 4 p., 108735.Research output: Contribution to journal › Article › Research › peer-review
Open Access1 Downloads (Pure) -
A comprehensive study of channel hot-carrier degradation in short channel MOSFETs with high-k dielectrics
Amat, E., Kauerauf, T., Rodriguez, R., Nafria, M., Aymerich, X., Degraeve, R. & Groeseneken, G., 1 Jan 2013, In: Microelectronic Engineering. 103, p. 144-149Research output: Contribution to journal › Article › Research › peer-review
17 Citations (Scopus) -
Gate voltage influence on the channel hot-carrier degradation of high-κ-Based Devices
Amat, E., Kauerauf, T., Degraeve, R., Rodríguez, R., Nafria, M., Aymerich, X. & Groeseneken, G., 1 Mar 2011, In: IEEE Transactions on Device and Materials Reliability. 11, 1, p. 92-97 5638616.Research output: Contribution to journal › Article › Research › peer-review
16 Citations (Scopus) -
Channel hot-carrier degradation in pMOS and nMOS short channel transistors with high-k dielectric stack
Amat, E., Kauerauf, T., Degraeve, R., Rodríguez, R., Nafría, M., Aymerich, X. & Groeseneken, G., 1 Jan 2010, In: Microelectronic Engineering. 87, p. 47-50Research output: Contribution to journal › Article › Research › peer-review
36 Citations (Scopus) -
Channel-hot-carrier degradation and bias temperature instabilities in CMOS inverters
Martín-Martínez, J., Gerardin, S., Amat, E., Rodríguez, R., Nafría, M., Aymerich, X., Paccagnella, A. & Ghidini, G., 7 Sept 2009, In: IEEE Transactions on Electron Devices. 56, p. 2155-2159Research output: Contribution to journal › Article › Research › peer-review
21 Citations (Scopus)
Thesis
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Degradació del stack dielèctric SiO2/high-K: BTI i portadors calents
Author: Amat Bertran, E., 10 Dec 2009Supervisor: Rodríguez Martínez, R. (Director)
Student thesis: Doctoral thesis