No photo of Enrique Alberto Miranda Castellano
  • Edifici Q. Campus de la UAB

    08193 Bellaterra (Cerdanyola del Vallès)

  • 3280 Citations
  • 30 h-Index
19972020

Research output per year

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Personal profile

Education/Academic qualification

Ph. D., Universidad de Buenos Aires

Award Date: 1 Jan 2002

Ph. D., Universitat Autònoma de Barcelona (UAB)

Award Date: 1 Jan 1999

External positions

Associate Researcher, Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET)

1 Jan 200131 Dec 2003

Assistant Professor, Universidad de Buenos Aires

1 Jan 198931 Dec 2003

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Projects

Research Output

  • 3280 Citations
  • 30 h-Index
  • 165 Article
  • 3 Chapter
  • 2 Review article

Analysis and simulation of the multiple resistive switching modes occurring in HfO <inf>x</inf> -based resistive random access memories using memdiodes

Petzold, S., Miranda, E., Sharath, S. U., Muñoz-Gorriz, J., Vogel, T., Piros, E., Kaiser, N., Eilhardt, R., Zintler, A., Molina-Luna, L., Suñé, J. & Alff, L., 21 Jun 2019, In : Journal of Applied Physics. 125, 234503.

Research output: Contribution to journalArticleResearch

  • 4 Citations (Scopus)

    An improved analytical model for the statistics of SET emergence point in HfO <inf>2</inf> memristive device

    Xiang, D., Zhang, R., Li, Y., Ye, C., Miranda, E., Suñé, J. & Long, S., 1 Feb 2019, In : AIP Advances. 9, 025118.

    Research output: Contribution to journalArticleResearch

  • 1 Citation (Scopus)

    Assessing the correlation between location and size of catastrophic breakdown events in high-k mim capacitors

    Munoz-Gorriz, J., Blachier, D., Reimbold, G., Campabadal, F., Sune, J., Monaghan, S., Cherkaoui, K., Hurley, P. K. & Miranda, E., 1 Jun 2019, In : IEEE Transactions on Device and Materials Reliability. 19, p. 452-460 8715659.

    Research output: Contribution to journalArticleResearch

  • 1 Citation (Scopus)

    Compact Modeling of Complementary Resistive Switching Devices Using Memdiodes

    Miranda, E. A. & Frohlich, K., 1 Jun 2019, In : IEEE Transactions on Electron Devices. 66, p. 2831-2836 8706626.

    Research output: Contribution to journalArticleResearch

  • Detection of inhibitory effects in the generation of breakdown spots in HfO<inf>2</inf>-based MIM devices

    Muñoz-Gorriz, J., Monaghan, S., Cherkaoui, K., Suñé, J., Hurley, P. K. & Miranda, E., 15 Jul 2019, In : Microelectronic Engineering. 215, 111023.

    Research output: Contribution to journalArticleResearch