Keyphrases
Carbon Nanotube Field Effect Transistor (CNTFET)
96%
Contact Resistance
75%
Extraction Methods
48%
Graphene Field-effect Transistor
43%
Transistor Technology
33%
Bias Dependence
30%
Resistance Extraction
29%
Transistor
28%
Carbon Nanotubes
28%
Field-effect Transistors
27%
Graphene FET
22%
High-frequency Performance
22%
Device Characteristics
21%
Small-signal Model
20%
High-frequency Applications
20%
Two Dimensional
18%
Small Signal
16%
Schottky Barrier Height
16%
Graphene Transistor
15%
Y-function Method
15%
Black Phosphorus
15%
Compact Modeling
15%
Multi-tube
15%
CNTFET Technology
14%
Mobility Degradation
14%
Parameter Extraction
14%
Short Channel
14%
Compact Model
13%
Bilayer Graphene
13%
Device Performance
13%
Y-function
12%
Pulse Measurements
12%
Performance Studies
12%
Measurement Basis
11%
Noise Analysis
11%
Emission Processes
11%
Hexagonal Boron Nitride (h-BN)
11%
Trap Emission
11%
Height Extraction
11%
Capture Process
11%
Trap Catches
11%
Organic Field-effect Transistors
11%
Transfer Length Method
11%
Heterojunction Bipolar Transistors
11%
Circuit Design
11%
Landauer
11%
Noise Behavior
11%
Resistance Evaluation
11%
Channel Resistance
11%
Physics-based
9%
Engineering
Field-Effect Transistor
100%
Carbon Nanotubes
80%
Field Effect Transistors
64%
Graphene
58%
Isolation Method
38%
Schottky Barrier
23%
Amplifier
20%
One Dimensional
18%
Equivalent Circuit
16%
Barrier Height
16%
Test Structure
16%
Figure of Merit
16%
Device Performance
15%
Channel Resistance
15%
Two Dimensional
14%
Constant Time
13%
Layer Graphene
13%
Signal Modeling
13%
Circuit Design
13%
Internals
12%
Transfer Length
11%
Length Method
11%
Noise Analysis
11%
Bipolar Transistor
11%
Heterojunctions
11%
Nitride
11%
Frequency Noise
10%
Electrical Device
9%
Signal Model
9%
Experimental Result
8%
Thermal Noise
8%
Noise Source
8%
Frequency Characteristic
8%
Reference Value
8%
Experimental Observation
7%
Gate Voltage
7%
Radio Frequency
7%
Metal-Oxide-Semiconductor Field-Effect Transistor
6%
Insertion Loss
6%
Channel Length
6%
Current Drain
6%
Channel Device
6%
Good Agreement
5%
Electronic State
5%
Semiconductor Device
5%
Analytical Result
5%
Carrier Mobility
5%
Shot Noise
5%
Energy Dissipation
5%
Proper Design
5%
