Worn-out oxide MOSFET characteristics: Role of gate current and device parameters on a current mirror

R. Rodríguez; J. Martín-Martínez; X. Aymerich; J. H. Stathis; M. Nafría

doi:10.1016/j.microrel.2007.01.035

Worn-out oxide MOSFET characteristics: Role of gate current and device parameters on a current mirror

R. Rodríguez, J. Martín-Martínez, X. Aymerich, J. H. Stathis, M. Nafría

Departament d'Enginyeria Electrònica

Producció científica: Contribució a revista › Article › Recerca › Avaluat per experts

6 Cites (Scopus)

Resum

In this work, the influence of gate oxide wear-out and breakdown (BD) on MOSFET output characteristics has been studied for short and long channel transistors. The experimental curves have been fitted to the BSIM4 model and have been introduced in a circuit simulator to study the effect of the oxide wear-out and BD in an analog circuit such as a current mirror. The results show important variations in the behaviour of the current mirror especially for the long channel transistor. © 2007 Elsevier Ltd. All rights reserved.

Idioma original	Anglès
Pàgines (de-a)	665-668
Revista	Microelectronics Reliability
Volum	47
DOIs	https://doi.org/10.1016/j.microrel.2007.01.035
Estat de la publicació	Publicada - 1 d’abr. 2007

Accés al document

10.1016/j.microrel.2007.01.035

Altres arxius i enllaços

Com citar-ho

@article{4fed7bbbda6641e08f71fc9c4c75d847,

title = "Worn-out oxide MOSFET characteristics: Role of gate current and device parameters on a current mirror",

abstract = "In this work, the influence of gate oxide wear-out and breakdown (BD) on MOSFET output characteristics has been studied for short and long channel transistors. The experimental curves have been fitted to the BSIM4 model and have been introduced in a circuit simulator to study the effect of the oxide wear-out and BD in an analog circuit such as a current mirror. The results show important variations in the behaviour of the current mirror especially for the long channel transistor. {\textcopyright} 2007 Elsevier Ltd. All rights reserved.",

author = "R. Rodr{\'i}guez and J. Mart{\'i}n-Mart{\'i}nez and X. Aymerich and Stathis, \{J. H.\} and M. Nafr{\'i}a",

year = "2007",

month = apr,

day = "1",

doi = "10.1016/j.microrel.2007.01.035",

language = "English",

volume = "47",

pages = "665--668",

journal = "Microelectronics Reliability",

issn = "0026-2714",

publisher = "Elsevier Limited",

}

TY - JOUR

T1 - Worn-out oxide MOSFET characteristics: Role of gate current and device parameters on a current mirror

AU - Rodríguez, R.

AU - Martín-Martínez, J.

AU - Aymerich, X.

AU - Stathis, J. H.

AU - Nafría, M.

PY - 2007/4/1

Y1 - 2007/4/1

N2 - In this work, the influence of gate oxide wear-out and breakdown (BD) on MOSFET output characteristics has been studied for short and long channel transistors. The experimental curves have been fitted to the BSIM4 model and have been introduced in a circuit simulator to study the effect of the oxide wear-out and BD in an analog circuit such as a current mirror. The results show important variations in the behaviour of the current mirror especially for the long channel transistor. © 2007 Elsevier Ltd. All rights reserved.

AB - In this work, the influence of gate oxide wear-out and breakdown (BD) on MOSFET output characteristics has been studied for short and long channel transistors. The experimental curves have been fitted to the BSIM4 model and have been introduced in a circuit simulator to study the effect of the oxide wear-out and BD in an analog circuit such as a current mirror. The results show important variations in the behaviour of the current mirror especially for the long channel transistor. © 2007 Elsevier Ltd. All rights reserved.

UR - https://dialnet.unirioja.es/servlet/articulo?codigo=2297134

UR - https://www.scopus.com/pages/publications/34247092881

U2 - 10.1016/j.microrel.2007.01.035

DO - 10.1016/j.microrel.2007.01.035

M3 - Article

SN - 0026-2714

VL - 47

SP - 665

EP - 668

JO - Microelectronics Reliability

JF - Microelectronics Reliability

ER -

Worn-out oxide MOSFET characteristics: Role of gate current and device parameters on a current mirror

Resum

Accés al document

Altres arxius i enllaços

Fingerprint

Com citar-ho