Voltage-Driven Hysteresis Model for Resistive Switching: SPICE Modeling and Circuit Applications

German Agustin Patterson, J. Sune, E. Miranda

Producció científica: Contribució a una revistaArticleRecercaAvaluat per experts

31 Cites (Scopus)

Resum

© 1982-2012 IEEE. Resistive switching devices are nonlinear electrical components that have drawn great attention in the design of new technologies including memory devices and neuromorphic circuits. In this paper, an SPICE implementation of a novel compact model is presented and put under test by means of different circuit configurations. The model is based on two identical opposite-biased diodes in series with a resistor where the switching behavior is governed by the creation and rupture of multiple conductive channels. Results show that the model is stable under different input sources and amplitudes and, with special interest, in multielement circuits. The model is validated with experimental data available in the literature. Both the corresponding SPICE code and schematic are provided in order to facilitate the model use and assessment.
Idioma originalEnglish
Número d’article8049320
Pàgines (de-a)2044-2051
RevistaIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
Volum36
Número12
DOIs
Estat de la publicacióPublicada - 1 de des. 2017

Fingerprint

Navegar pels temes de recerca de 'Voltage-Driven Hysteresis Model for Resistive Switching: SPICE Modeling and Circuit Applications'. Junts formen un fingerprint únic.

Com citar-ho