Variability and Reliability in Ultra-Scaled MOS Devices: How Should They Be Evaluated from Nanoscale to Circuit Level?

Montserrat Nafría; Rosana Rodríguez; Marc Porti; Jarvier Martín-Martínez; Mario Lanza; Xavier Aymerich; D. Bauza; D. Misra

Variability and Reliability in Ultra-Scaled MOS Devices: How Should They Be Evaluated from Nanoscale to Circuit Level?

Montserrat Nafría, Rosana Rodríguez, Marc Porti, Jarvier Martín-Martínez, Mario Lanza, Xavier Aymerich, D. Bauza, D. Misra

Departament d'Enginyeria Electrònica

Producció científica: Capítol de llibre › Capítol › Recerca

Idioma original	Anglès
Títol de la publicació	Dielectrics for Nanosystems 4: Materials Science, Processing, Reliability, and Manufacturing
Lloc de publicació	Pennington (US)
Editor	The Electrochemical Society
Pàgines	225-236
Nombre de pàgines	11
Edició	1
ISBN (imprès)	978-1-56677-417-8
Estat de la publicació	Publicada - 1 de gen. 2010

Com citar-ho

Nafría, M., Rodríguez, R., Porti, M., Martín-Martínez, J., Lanza, M., Aymerich, X., Bauza, D., & Misra, D. (2010). Variability and Reliability in Ultra-Scaled MOS Devices: How Should They Be Evaluated from Nanoscale to Circuit Level? In Dielectrics for Nanosystems 4: Materials Science, Processing, Reliability, and Manufacturing (1 ed., pàg. 225-236). The Electrochemical Society.

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title = "Variability and Reliability in Ultra-Scaled MOS Devices: How Should They Be Evaluated from Nanoscale to Circuit Level?",

author = "Montserrat Nafr{\'i}a and Rosana Rodr{\'i}guez and Marc Porti and Jarvier Mart{\'i}n-Mart{\'i}nez and Mario Lanza and Xavier Aymerich and D. Bauza and D. Misra",

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