Using AFM related techniques for the nanoscale electrical characterization of irradiated ultra-thin gate oxides

M. Porti, S. Gerardin, M. Nafría, X. Aymerich, A. Cester, A. Paccagnella

Producció científica: Contribució a revista › Article › Recerca › Avaluat per experts

20 Cites (Scopus)

Idioma original	Anglès
Pàgines (de-a)	1891-1897
Revista	IEEE Transactions on Nuclear Science
Volum	54
DOIs	https://doi.org/10.1109/TNS.2007.909483
Estat de la publicació	Publicada - 1 de gen. 2007

Accés al document

@article{5efb8ba455754a51994497305654b468,

title = "Using AFM related techniques for the nanoscale electrical characterization of irradiated ultra-thin gate oxides",

author = "M. Porti and S. Gerardin and M. Nafr{\'i}a and X. Aymerich and A. Cester and A. Paccagnella",

year = "2007",

month = jan,

day = "1",

doi = "10.1109/TNS.2007.909483",

language = "English",

volume = "54",

pages = "1891--1897",

journal = "IEEE Transactions on Nuclear Science",

issn = "0018-9499",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - JOUR

T1 - Using AFM related techniques for the nanoscale electrical characterization of irradiated ultra-thin gate oxides

AU - Porti, M.

AU - Gerardin, S.

AU - Nafría, M.

AU - Aymerich, X.

AU - Cester, A.

AU - Paccagnella, A.

PY - 2007/1/1

Y1 - 2007/1/1

U2 - 10.1109/TNS.2007.909483

DO - 10.1109/TNS.2007.909483

M3 - Article

SN - 0018-9499

VL - 54

SP - 1891

EP - 1897

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

ER -