UHV CAFM characterization of high-k dielectrics: effect of the technique resolution on the pre- and post-breakdown electrical measurements

M. Lanza, M. Porti, M. Nafría, X. Aymerich, E. Whittaker, B. Hamilton

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Idioma original	Anglès
Pàgines (de-a)	1312-1315
Revista	Microelectronics and Reliability
Volum	50
Número	9-11
DOIs	https://doi.org/10.1016/j.microrel.2010.07.049
Estat de la publicació	Publicada - 1 d’abr. 2010

Accés al document

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title = "UHV CAFM characterization of high-k dielectrics: effect of the technique resolution on the pre- and post-breakdown electrical measurements",

author = "M. Lanza and M. Porti and M. Nafr{\'i}a and X. Aymerich and E. Whittaker and B. Hamilton",

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T1 - UHV CAFM characterization of high-k dielectrics: effect of the technique resolution on the pre- and post-breakdown electrical measurements

AU - Lanza, M.

AU - Porti, M.

AU - Nafría, M.

AU - Aymerich, X.

AU - Whittaker, E.

AU - Hamilton, B.

PY - 2010/4/1

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SN - 0026-2714

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JO - Microelectronics and Reliability

JF - Microelectronics and Reliability

IS - 9-11

ER -