Tunnelling in Al-silicon oxynitride-Si structures

A. Faigón*, A. Straboni, E. Miranda, G. Redin

*Autor corresponent d’aquest treball

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Resum

Tunnelling current-voltage (I-V) characteristics were measured in metal-insulator-semiconductor capacitor structures with oxynitride layers 45 and 60 Å thick obtained by nitridation of SiO2 in NH3 plasma. The oscillatory behaviour of the current, associated with the partial reflection of the electronic wave functions at the Si-insulator interface, was observed and provides information about its barrier height. The coincidence between this value for the less nitrided samples and the corresponding value for the oxide indicates that the nitridation proceeds from the exposed surface. A self-consistent calculation allowing precise determination of the cathodic barrier using the Fowler-Nordheim relationship for very thin insulators was proposed. The results obtained showed a decrease in the Al-oxynitride barrier height with nitridation time. For long nitridations, the I-V characteristics cannot be interpreted as pure Fowler-Nordheim tunnelling.

Idioma originalAnglès
Pàgines (de-a)133-137
Nombre de pàgines5
RevistaThin Solid Films
Volum230
Número2
DOIs
Estat de la publicacióPublicada - 10 d’ag. 1993

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