Tunneling in sub-5 nm La<inf>2</inf>O<inf>3</inf> films deposited by E-beam evaporation

Keyphrases

• Tunneling 100%
• Leakage Current 100%
• La2O3 100%
• Electron Beam Evaporation 100%
• Sub-5 Nm 100%
• In Situ 50%
• Electrical Stress 50%
• Ultrathin 50%
• Insulator 50%
• Annealing 50%
• Linearization 50%
• Dielectric Film 50%
• Series Resistance 50%
• Current-voltage Characteristics 50%
• Vacuum Condition 50%
• Ultra-high Vacuum 50%
• Current Flow 50%
• Value-based 50%
• Resistance Value 50%
• Conduction Regime 50%
• Wide Voltage Range 50%
• Si(111) 50%
• Oxide Layer 50%
• N-Si 50%
• Series Resistance Effect 50%
• Conduction Mechanism 50%
• Low Bias 50%
• Tunnel Model 50%
• Fowler-Nordheim 50%
• Thickness Uniformity 50%
• Fowler-Nordheim Plot 50%

Engineering

• Deposited Film 100%
• Tunnel Construction 100%
• Oxide Layer 50%
• Series Resistance Effect 50%
• Series Resistance 50%
• Fitting Parameter 50%
• Current Flow 50%
• Electron-Beam Evaporation 50%
• Current-Voltage Characteristic 50%
• Nonuniformity 50%
• Dielectric Films 50%

Material Science

• Current Voltage Characteristics 100%
• Film 100%
• Dielectric Films 100%
• Oxide Compound 100%