TRAPPISTe pixel sensor with 2 um SOI technology

Maria Elena Martin Albarran

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Títol traduït de la contribució	TRAPPISTe pixel sensor with 2 um SOI technology
Idioma original	Múltiples idiomes
Pàgines (de-a)	19-21
Revista	Nuclear instruments & methods in physics research. Section A, Accelerators, spectometers, detectors and associated equipment
Volum	633
Estat de la publicació	Publicada - 1 de gen. 2011

Com citar-ho

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title = "TRAPPISTe pixel sensor with 2 um SOI technology",

author = "\{Martin Albarran\}, \{Maria Elena\}",

year = "2011",

month = jan,

day = "1",

language = "M{\'u}ltiples idiomas",

volume = "633",

pages = "19--21",

journal = "Nuclear instruments \& methods in physics research. Section A, Accelerators, spectometers, detectors and associated equipment",

issn = "0168-9002",

publisher = "Elsevier",

}

TY - JOUR

T1 - TRAPPISTe pixel sensor with 2 um SOI technology

AU - Martin Albarran, Maria Elena

PY - 2011/1/1

Y1 - 2011/1/1

M3 - Artículo

SN - 0168-9002

VL - 633

SP - 19

EP - 21

JO - Nuclear instruments & methods in physics research. Section A, Accelerators, spectometers, detectors and associated equipment

JF - Nuclear instruments & methods in physics research. Section A, Accelerators, spectometers, detectors and associated equipment

ER -