Transient analysis of resonant tunneling diodes in the self consistent Wigner distribution formalism.: Proceeding of the II-V SemiconductorDevices Simulation Workshop

J García; X Oriols; F Martin; J Suñé; T Gonzalez; J Mateos; D Pardo

Transient analysis of resonant tunneling diodes in the self consistent Wigner distribution formalism. Proceeding of the II-V SemiconductorDevices Simulation Workshop

J García, X Oriols, F Martin, J Suñé, T Gonzalez, J Mateos, D Pardo

Producció científica: LLibre/informe › Llibre d'Actes › Recerca

Idioma original	Anglès
Lloc de publicació	- (IT)
Nombre de pàgines	1
Estat de la publicació	Publicada - de jul. 1997

Com citar-ho

@book{a9773f0dcb82404b83378398af68d79f,

title = "Transient analysis of resonant tunneling diodes in the self consistent Wigner distribution formalism.: Proceeding of the II-V SemiconductorDevices Simulation Workshop",

author = "J Garc{\'i}a and X Oriols and F Martin and J Su{\~n}{\'e} and T Gonzalez and J Mateos and D Pardo",

year = "1997",

month = jul,

language = "English",

}

TY - BOOK

T1 - Transient analysis of resonant tunneling diodes in the self consistent Wigner distribution formalism.

T2 - Proceeding of the II-V SemiconductorDevices Simulation Workshop

AU - García, J

AU - Oriols, X

AU - Martin, F

AU - Suñé, J

AU - Gonzalez, T

AU - Mateos, J

AU - Pardo, D

PY - 1997/7

Y1 - 1997/7

M3 - Proceeding

BT - Transient analysis of resonant tunneling diodes in the self consistent Wigner distribution formalism.

CY - - (IT)

ER -