TY - JOUR
T1 - Transient analysis of charge transport in the nitride of MNOS devices under Fowler-Nordheim injection conditions
AU - Martin, F.
AU - Aymerich, X.
PY - 1991/1/1
Y1 - 1991/1/1
N2 - The transient behavior of current density distributions in the nitride of MNOS devices subjected to constant current stress has been studied via numerical calculation and on the basis of Arnett's trapping model. We have found that under low injection conditions the current distributions can be well described by two parameters which have an easy physical interpretation and the time evolution of which is directly related to the characteristics of the capture centers. A new method to obtain the trapping parameters, based on the measure of the transient of current at the anode of samples with different nitride thickness, is proposed. © 1991.
AB - The transient behavior of current density distributions in the nitride of MNOS devices subjected to constant current stress has been studied via numerical calculation and on the basis of Arnett's trapping model. We have found that under low injection conditions the current distributions can be well described by two parameters which have an easy physical interpretation and the time evolution of which is directly related to the characteristics of the capture centers. A new method to obtain the trapping parameters, based on the measure of the transient of current at the anode of samples with different nitride thickness, is proposed. © 1991.
UR - https://www.scopus.com/pages/publications/0026257946
U2 - 10.1016/0026-2692(91)90009-C
DO - 10.1016/0026-2692(91)90009-C
M3 - Article
SN - 0959-8324
VL - 22
SP - 5
EP - 17
JO - Microelectronics Journal
JF - Microelectronics Journal
ER -