Toy model for the progressive breakdown dynamics of ultrathin gate dielectrics

E. Miranda*, D. Jiménez, J. Suñé

*Autor corresponent d’aquest treball

Producció científica: Capítol de llibreCapítolRecercaAvaluat per experts

Resum

A simple analytic model for the progressive breakdown (BD) dynamics of ultrathin) gate oxides is presented. It is shown how the interplay between series and parallel resistances that represent the breakdown path and its surroundings leads to a sigmoidal I-t characteristic compatible with experimental data. The analysis is carried out using the Lyapunov exponent and the potential function associated with the logistic equation for the leakage current. The roles played by the initial current value and the system's attractor in the breakdown trajectories are discussed.

Idioma originalEnglish
Títol de la publicacióUlis 2011 Ultimate Integration on Silicon
Pàgines1-3
Nombre de pàgines3
ISBN (electrònic)978-1-4577-0091-0, 978-1-4577-0090-3
DOIs
Estat de la publicacióPublicada - 2011

Sèrie de publicacions

Nom2011 12th International Conference on Ultimate Integration on Silicon, ULIS 2011

Fingerprint

Navegar pels temes de recerca de 'Toy model for the progressive breakdown dynamics of ultrathin gate dielectrics'. Junts formen un fingerprint únic.

Com citar-ho