Three-state resistive switching in HfO<inf>2</inf>-based RRAM

Xiaojuan Lian, Enrique Miranda, Shibing Long, Luca Perniola, Ming Liu, Jordi Suñé

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We investigate the reset transition of HfO2-based RRAM structures with emphasis on revealing three-state resistive switching effects. We study nonpolar switching in Pt/HfO2/Pt and unipolar/bipolar switching in Pt/Ti/HfO2/Pt structures, respectively. However, three-state resistive switching is only confirmed in the former case by means of various reset methodologies. Using two-step reset experiments it is shown that the transition to the complete reset state occurs at higher voltages if the CF first drops to the intermediate state. © 2014 Elsevier Ltd. All rights reserv.
Idioma originalEnglish
Pàgines (de-a)38-44
RevistaSolid-State Electronics
Estat de la publicacióPublicada - 1 de gen. 2014


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