Three-state resistive switching in HfO<inf>2</inf>-based RRAM

Xiaojuan Lian; Enrique Miranda; Shibing Long; Luca Perniola; Ming Liu; Jordi Suñé

doi:10.1016/j.sse.2014.04.016

Three-state resistive switching in HfO<inf>2</inf>-based RRAM

Xiaojuan Lian, Enrique Miranda, Shibing Long, Luca Perniola, Ming Liu, Jordi Suñé

Departament d'Enginyeria Electrònica

Producció científica: Contribució a revista › Article › Recerca › Avaluat per experts

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We investigate the reset transition of HfO2-based RRAM structures with emphasis on revealing three-state resistive switching effects. We study nonpolar switching in Pt/HfO2/Pt and unipolar/bipolar switching in Pt/Ti/HfO2/Pt structures, respectively. However, three-state resistive switching is only confirmed in the former case by means of various reset methodologies. Using two-step reset experiments it is shown that the transition to the complete reset state occurs at higher voltages if the CF first drops to the intermediate state. © 2014 Elsevier Ltd. All rights reserv.

Idioma original	Anglès
Pàgines (de-a)	38-44
Revista	Solid-State Electronics
Volum	98
DOIs	https://doi.org/10.1016/j.sse.2014.04.016
Estat de la publicació	Publicada - 1 de gen. 2014

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10.1016/j.sse.2014.04.016

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@article{6a174f200ce946669b403d5e6aaf565d,

title = "Three-state resistive switching in HfO2-based RRAM",

abstract = "We investigate the reset transition of HfO2-based RRAM structures with emphasis on revealing three-state resistive switching effects. We study nonpolar switching in Pt/HfO2/Pt and unipolar/bipolar switching in Pt/Ti/HfO2/Pt structures, respectively. However, three-state resistive switching is only confirmed in the former case by means of various reset methodologies. Using two-step reset experiments it is shown that the transition to the complete reset state occurs at higher voltages if the CF first drops to the intermediate state. {\textcopyright} 2014 Elsevier Ltd. All rights reserv.",

keywords = "Non-voltatile memories, Quantum wire, Resistive switching, RRAM",

author = "Xiaojuan Lian and Enrique Miranda and Shibing Long and Luca Perniola and Ming Liu and Jordi Su{\~n}{\'e}",

year = "2014",

month = jan,

day = "1",

doi = "10.1016/j.sse.2014.04.016",

language = "English",

volume = "98",

pages = "38--44",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Limited",

}

TY - JOUR

T1 - Three-state resistive switching in HfO2-based RRAM

AU - Lian, Xiaojuan

AU - Miranda, Enrique

AU - Long, Shibing

AU - Perniola, Luca

AU - Liu, Ming

AU - Suñé, Jordi

PY - 2014/1/1

Y1 - 2014/1/1

N2 - We investigate the reset transition of HfO2-based RRAM structures with emphasis on revealing three-state resistive switching effects. We study nonpolar switching in Pt/HfO2/Pt and unipolar/bipolar switching in Pt/Ti/HfO2/Pt structures, respectively. However, three-state resistive switching is only confirmed in the former case by means of various reset methodologies. Using two-step reset experiments it is shown that the transition to the complete reset state occurs at higher voltages if the CF first drops to the intermediate state. © 2014 Elsevier Ltd. All rights reserv.

AB - We investigate the reset transition of HfO2-based RRAM structures with emphasis on revealing three-state resistive switching effects. We study nonpolar switching in Pt/HfO2/Pt and unipolar/bipolar switching in Pt/Ti/HfO2/Pt structures, respectively. However, three-state resistive switching is only confirmed in the former case by means of various reset methodologies. Using two-step reset experiments it is shown that the transition to the complete reset state occurs at higher voltages if the CF first drops to the intermediate state. © 2014 Elsevier Ltd. All rights reserv.

KW - Non-voltatile memories

KW - Quantum wire

KW - Resistive switching

KW - RRAM

U2 - 10.1016/j.sse.2014.04.016

DO - 10.1016/j.sse.2014.04.016

M3 - Article

SN - 0038-1101

VL - 98

SP - 38

EP - 44

JO - Solid-State Electronics

JF - Solid-State Electronics

ER -

Three-state resistive switching in HfO<inf>2</inf>-based RRAM

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