Thermal Isolation Through Nanostructuring

David Leadley, Vishal Shah, Jouni Ahopelto, Francesc Alzina, Emigdio Chávez-Ángel, Juha Muhonen, Maksym Myronov, Androula G. Nassiopoulou, Hung Nguyen, Evan Parker, Jukka Pekola, Martin Prest, Mika Prunnila, Juan Sebastian Reparaz, Andrey Shchepetov, Clivia Sotomayor-Torres, Katerina Valalaki, Terry Whall

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    © ISTE Ltd 2014. All rights reserved. This chapter discusses the cooling of a platform, which requires the electronic coolers to extract heat by coupling to phonons within the platform material. Major results obtained within the nanofunction NoE on the development of nanomodulated magnetic materials and the investigation of their main properties are also presented. The cooling power of the devices becomes paramount, as opposed to the base temperature that could be reached, and must exceed heat leaks into the platform from the surroundings. This indirect cooling is desirable for systems where electrical isolation from the refrigeration elements is required, such as in quantum information applications or superconducting transition edge sensors (TESs). Thick porous Si layers on the Si wafer constitute alternative structures that could replace the rather fragile silicon nitride membranes for use as thermal isolation platforms. The structure and morphology of porous Si determines its electrical and thermal conductivity.
    Idioma originalAnglès
    Títol de la publicacióBeyond CMOS Nanodevices 1
    Pàgines331-363
    Nombre de pàgines32
    Volum9781848216549
    DOIs
    Estat de la publicacióPublicada - 23 de juny 2014

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