TY - CHAP
T1 - Thermal Isolation Through Nanostructuring
AU - Leadley, David
AU - Shah, Vishal
AU - Ahopelto, Jouni
AU - Alzina, Francesc
AU - Chávez-Ángel, Emigdio
AU - Muhonen, Juha
AU - Myronov, Maksym
AU - Nassiopoulou, Androula G.
AU - Nguyen, Hung
AU - Parker, Evan
AU - Pekola, Jukka
AU - Prest, Martin
AU - Prunnila, Mika
AU - Reparaz, Juan Sebastian
AU - Shchepetov, Andrey
AU - Sotomayor-Torres, Clivia
AU - Valalaki, Katerina
AU - Whall, Terry
PY - 2014/6/23
Y1 - 2014/6/23
N2 - © ISTE Ltd 2014. All rights reserved. This chapter discusses the cooling of a platform, which requires the electronic coolers to extract heat by coupling to phonons within the platform material. Major results obtained within the nanofunction NoE on the development of nanomodulated magnetic materials and the investigation of their main properties are also presented. The cooling power of the devices becomes paramount, as opposed to the base temperature that could be reached, and must exceed heat leaks into the platform from the surroundings. This indirect cooling is desirable for systems where electrical isolation from the refrigeration elements is required, such as in quantum information applications or superconducting transition edge sensors (TESs). Thick porous Si layers on the Si wafer constitute alternative structures that could replace the rather fragile silicon nitride membranes for use as thermal isolation platforms. The structure and morphology of porous Si determines its electrical and thermal conductivity.
AB - © ISTE Ltd 2014. All rights reserved. This chapter discusses the cooling of a platform, which requires the electronic coolers to extract heat by coupling to phonons within the platform material. Major results obtained within the nanofunction NoE on the development of nanomodulated magnetic materials and the investigation of their main properties are also presented. The cooling power of the devices becomes paramount, as opposed to the base temperature that could be reached, and must exceed heat leaks into the platform from the surroundings. This indirect cooling is desirable for systems where electrical isolation from the refrigeration elements is required, such as in quantum information applications or superconducting transition edge sensors (TESs). Thick porous Si layers on the Si wafer constitute alternative structures that could replace the rather fragile silicon nitride membranes for use as thermal isolation platforms. The structure and morphology of porous Si determines its electrical and thermal conductivity.
KW - Crystalline materials
KW - Electronic coolers
KW - Nanostructured porous Si layers
KW - Nanostructuring
KW - Thermal conductivity
KW - Thermal isolation
U2 - 10.1002/9781118984772.ch12
DO - 10.1002/9781118984772.ch12
M3 - Chapter
SN - 9781118984772
SN - 9781848216549
VL - 9781848216549
SP - 331
EP - 363
BT - Beyond CMOS Nanodevices 1
ER -