TY - JOUR
T1 - Theoretical analysis of thermal rectification in a bulk Si/nanoporous Si device
AU - Criado-Sancho, M.
AU - Del Castillo, L. F.
AU - Casas-Vázquez, J.
AU - Jou, D.
PY - 2012/4/9
Y1 - 2012/4/9
N2 - We present a theoretical analysis of thermal rectification in a porous Si/bulk Si device, taking into account ballistic effects in phonon-pore collisions when phonon mean free path is much longer than the radius of the pores. Starting from an approximate analytical expression for the effective thermal conductivity of porous Si, we obtain the thermal rectifying coefficient of the device as a function of porosity, pore size, temperature interval, and relative lengths of porous and bulk samples. © 2012 Elsevier B.V.
AB - We present a theoretical analysis of thermal rectification in a porous Si/bulk Si device, taking into account ballistic effects in phonon-pore collisions when phonon mean free path is much longer than the radius of the pores. Starting from an approximate analytical expression for the effective thermal conductivity of porous Si, we obtain the thermal rectifying coefficient of the device as a function of porosity, pore size, temperature interval, and relative lengths of porous and bulk samples. © 2012 Elsevier B.V.
KW - Heat rectification
KW - Phonon hydrodynamics
KW - Phononics
KW - Porous Si
UR - https://www.scopus.com/pages/publications/84859822604
U2 - 10.1016/j.physleta.2012.03.045
DO - 10.1016/j.physleta.2012.03.045
M3 - Article
SN - 0375-9601
VL - 376
SP - 1641
EP - 1644
JO - Physics Letters, Section A: General, Atomic and Solid State Physics
JF - Physics Letters, Section A: General, Atomic and Solid State Physics
ER -