The TDDB power-law model-Physics and experimental evidences

R.-P. Vollertsen, E. Miranda

Producció científica: Contribució a revista › Article › Recerca

2 Cites (Scopus)

Idioma original	Anglès
Pàgines (de-a)	1807-1808
Revista	Microelectronics and Reliability
Volum	45
Número	12
DOIs	https://doi.org/10.1016/j.microrel.2005.04.005
Estat de la publicació	Publicada - 1 de des. 2005

Accés al document

@article{93d1d6b4675d4b7d909c9ca78e7b18ff,

title = "The TDDB power-law model-Physics and experimental evidences",

author = "R.-P. Vollertsen and E. Miranda",

year = "2005",

month = dec,

day = "1",

doi = "10.1016/j.microrel.2005.04.005",

language = "English",

volume = "45",

pages = "1807--1808",

journal = "Microelectronics and Reliability",

issn = "0026-2714",

publisher = "Elsevier Limited",

number = "12",

}

TY - JOUR

T1 - The TDDB power-law model-Physics and experimental evidences

AU - Vollertsen, R.-P.

AU - Miranda, E.

PY - 2005/12/1

Y1 - 2005/12/1

UR - https://www.scopus.com/pages/publications/27744599729

U2 - 10.1016/j.microrel.2005.04.005

DO - 10.1016/j.microrel.2005.04.005

M3 - Article

SN - 0026-2714

VL - 45

SP - 1807

EP - 1808

JO - Microelectronics and Reliability

JF - Microelectronics and Reliability

IS - 12

ER -