The statistics of set time of oxide-based resistive switching memory

Meiyun Zhang; Shibing Long; Guoming Wang; Zhaoan Yu; Yang Li; Dinglin Xu; Hangbing Lv; Qi Liu; Enrique Miranda; Jordi Sune; Ming Liu

doi:10.1109/IPFA.2016.7564324

The statistics of set time of oxide-based resistive switching memory

Meiyun Zhang, Shibing Long, Guoming Wang, Zhaoan Yu, Yang Li, Dinglin Xu, Hangbing Lv, Qi Liu, Enrique Miranda, Jordi Sune, Ming Liu

Departament d'Enginyeria Electrònica

Producció científica: Contribució a revista › Article › Recerca › Avaluat per experts

Resum

In this paper, the characteristics of the set time (t_set) correlated with the initial off-state resistance (R_off) were studied using a statistical method based on a Ti/ZrO₂/Pt RRAM device. The data were collected by the width-adjusting pulse operation (WAPO) method. The Weibull distribution is used to analyze t_set variation. Both the Weibull slope (β_t) and scale factor (t_set63%) of t_Set distributions increase logarithmically with R_off. An analytical cell-based model was developed to explain the experimental statistics. Our result provides an inspiration on the switching uniformity and optimization of the tradeoff between the set speed-disturb dilemma.

Idioma original	Anglès
Pàgines (de-a)	392-394
Nombre de pàgines	3
Revista	Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
DOIs	https://doi.org/10.1109/IPFA.2016.7564324
Estat de la publicació	Publicada - 9 de set. 2016

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10.1109/IPFA.2016.7564324

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title = "The statistics of set time of oxide-based resistive switching memory",

abstract = "In this paper, the characteristics of the set time (tset) correlated with the initial off-state resistance (Roff) were studied using a statistical method based on a Ti/ZrO2/Pt RRAM device. The data were collected by the width-adjusting pulse operation (WAPO) method. The Weibull distribution is used to analyze tset variation. Both the Weibull slope (βt) and scale factor (tset63%) of tSet distributions increase logarithmically with Roff. An analytical cell-based model was developed to explain the experimental statistics. Our result provides an inspiration on the switching uniformity and optimization of the tradeoff between the set speed-disturb dilemma.",

author = "Meiyun Zhang and Shibing Long and Guoming Wang and Zhaoan Yu and Yang Li and Dinglin Xu and Hangbing Lv and Qi Liu and Enrique Miranda and Jordi Sune and Ming Liu",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.",

year = "2016",

month = sep,

day = "9",

doi = "10.1109/IPFA.2016.7564324",

language = "English",

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TY - JOUR

T1 - The statistics of set time of oxide-based resistive switching memory

AU - Zhang, Meiyun

AU - Long, Shibing

AU - Wang, Guoming

AU - Yu, Zhaoan

AU - Li, Yang

AU - Xu, Dinglin

AU - Lv, Hangbing

AU - Liu, Qi

AU - Miranda, Enrique

AU - Sune, Jordi

AU - Liu, Ming

PY - 2016/9/9

Y1 - 2016/9/9

N2 - In this paper, the characteristics of the set time (tset) correlated with the initial off-state resistance (Roff) were studied using a statistical method based on a Ti/ZrO2/Pt RRAM device. The data were collected by the width-adjusting pulse operation (WAPO) method. The Weibull distribution is used to analyze tset variation. Both the Weibull slope (βt) and scale factor (tset63%) of tSet distributions increase logarithmically with Roff. An analytical cell-based model was developed to explain the experimental statistics. Our result provides an inspiration on the switching uniformity and optimization of the tradeoff between the set speed-disturb dilemma.

AB - In this paper, the characteristics of the set time (tset) correlated with the initial off-state resistance (Roff) were studied using a statistical method based on a Ti/ZrO2/Pt RRAM device. The data were collected by the width-adjusting pulse operation (WAPO) method. The Weibull distribution is used to analyze tset variation. Both the Weibull slope (βt) and scale factor (tset63%) of tSet distributions increase logarithmically with Roff. An analytical cell-based model was developed to explain the experimental statistics. Our result provides an inspiration on the switching uniformity and optimization of the tradeoff between the set speed-disturb dilemma.

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DO - 10.1109/IPFA.2016.7564324

M3 - Article

AN - SCOPUS:84989940755

SP - 392

EP - 394

JO - Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

JF - Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

ER -

The statistics of set time of oxide-based resistive switching memory

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