Systematic characterization of soft- and hard-breakdown spots using techniques with nanometer resolution

M. Porti; S. Gerardin; M. Nafría; X. Aymerich; A. Cester; A. Paccagnella; P. Schiavuta; R. Pierobon

doi:10.1016/j.mee.2007.04.063

Systematic characterization of soft- and hard-breakdown spots using techniques with nanometer resolution

M. Porti, S. Gerardin, M. Nafría, X. Aymerich, A. Cester, A. Paccagnella, P. Schiavuta, R. Pierobon

Departament d'Enginyeria Electrònica

Producció científica: Contribució a revista › Article › Recerca › Avaluat per experts

15 Cites (Scopus)

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In this work, different Atomic Force Microscopy (AFM) related techniques have been used to completely characterize soft- and hard-breakdown spots of SiO2 gate oxides. In particular, C-AFM (Conductive AFM), SCM (Scanning Capacitance Microscopy) and KPFM (Kelvin Probe Force Microscopy) were used to study the propagation, conduction and the electrical damage of previously broken down gate oxide areas. The results show that the combination of these techniques allows a complete and systematic study of the BD phenomenology at the nanoscale. © 2007 Elsevier B.V. All rights reserved.

Idioma original	Anglès
Pàgines (de-a)	1956-1959
Revista	Microelectronic Engineering
Volum	84
DOIs	https://doi.org/10.1016/j.mee.2007.04.063
Estat de la publicació	Publicada - 1 de set. 2007

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10.1016/j.mee.2007.04.063

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title = "Systematic characterization of soft- and hard-breakdown spots using techniques with nanometer resolution",

abstract = "In this work, different Atomic Force Microscopy (AFM) related techniques have been used to completely characterize soft- and hard-breakdown spots of SiO2 gate oxides. In particular, C-AFM (Conductive AFM), SCM (Scanning Capacitance Microscopy) and KPFM (Kelvin Probe Force Microscopy) were used to study the propagation, conduction and the electrical damage of previously broken down gate oxide areas. The results show that the combination of these techniques allows a complete and systematic study of the BD phenomenology at the nanoscale. {\textcopyright} 2007 Elsevier B.V. All rights reserved.",

keywords = "AFM, Breakdown, Oxide reliability",

author = "M. Porti and S. Gerardin and M. Nafr{\'i}a and X. Aymerich and A. Cester and A. Paccagnella and P. Schiavuta and R. Pierobon",

year = "2007",

month = sep,

day = "1",

doi = "10.1016/j.mee.2007.04.063",

language = "English",

volume = "84",

pages = "1956--1959",

journal = "Microelectronic Engineering",

issn = "0167-9317",

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TY - JOUR

T1 - Systematic characterization of soft- and hard-breakdown spots using techniques with nanometer resolution

AU - Porti, M.

AU - Gerardin, S.

AU - Nafría, M.

AU - Aymerich, X.

AU - Cester, A.

AU - Paccagnella, A.

AU - Schiavuta, P.

AU - Pierobon, R.

PY - 2007/9/1

Y1 - 2007/9/1

N2 - In this work, different Atomic Force Microscopy (AFM) related techniques have been used to completely characterize soft- and hard-breakdown spots of SiO2 gate oxides. In particular, C-AFM (Conductive AFM), SCM (Scanning Capacitance Microscopy) and KPFM (Kelvin Probe Force Microscopy) were used to study the propagation, conduction and the electrical damage of previously broken down gate oxide areas. The results show that the combination of these techniques allows a complete and systematic study of the BD phenomenology at the nanoscale. © 2007 Elsevier B.V. All rights reserved.

AB - In this work, different Atomic Force Microscopy (AFM) related techniques have been used to completely characterize soft- and hard-breakdown spots of SiO2 gate oxides. In particular, C-AFM (Conductive AFM), SCM (Scanning Capacitance Microscopy) and KPFM (Kelvin Probe Force Microscopy) were used to study the propagation, conduction and the electrical damage of previously broken down gate oxide areas. The results show that the combination of these techniques allows a complete and systematic study of the BD phenomenology at the nanoscale. © 2007 Elsevier B.V. All rights reserved.

KW - AFM

KW - Breakdown

KW - Oxide reliability

U2 - 10.1016/j.mee.2007.04.063

DO - 10.1016/j.mee.2007.04.063

M3 - Article

SN - 0167-9317

VL - 84

SP - 1956

EP - 1959

JO - Microelectronic Engineering

JF - Microelectronic Engineering

ER -

Systematic characterization of soft- and hard-breakdown spots using techniques with nanometer resolution

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