TY - JOUR
T1 - Successive oxide breakdown statistics: Correlation effects, reliability methodologies, and their limits
AU - Suné, Jordi
AU - Wu, Ernest Y.
AU - Lai, Wing L.
PY - 2004/10/1
Y1 - 2004/10/1
N2 - This paper deals with the statistics of successive oxide breakdown (BD) events in MOS devices. Correlation effects between these successive events are experimentally related to the statistics of BD current jumps, thus suggesting that they are related to lateral propagation of the BD path. The application of the successive BD theory to chip reliability assessment is discussed. Several failure criteria and the related reliability methodologies are considered and some of their limits are established. © 2004 IEEE.
AB - This paper deals with the statistics of successive oxide breakdown (BD) events in MOS devices. Correlation effects between these successive events are experimentally related to the statistics of BD current jumps, thus suggesting that they are related to lateral propagation of the BD path. The application of the successive BD theory to chip reliability assessment is discussed. Several failure criteria and the related reliability methodologies are considered and some of their limits are established. © 2004 IEEE.
U2 - 10.1109/TED.2004.835986
DO - 10.1109/TED.2004.835986
M3 - Article
SN - 0018-9383
VL - 51
SP - 1584
EP - 1592
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 10
ER -