Study of TiN/Ti/HfO2/W resistive switching devices: characterization and modeling of the set and reset transitions using an external capacitor discharge

H. García*, F. Jiménez-Molinos, G. Vinuesa, M. B. González, J. B. Roldán, E. Miranda, F. Campabadal, H. Castán, S. Dueñas

*Autor corresponent d’aquest treball

Producció científica: Contribució a una revistaArticleRecercaAvaluat per experts

Resum

In this work, we have studied the control of set and the reset transitions in TiN/Ti/HfO2/W resistive switching devices using a new approach based on the injection of a limited amount of charge through the use of a capacitor discharge. Instead of applying conventional voltage or current signals, the capacitor discharge through the devices is able to perform both transitions. An accumulative process is observed if we apply consecutive discharges, and, when increasing the capacitor voltage in each discharge, the transitions between both resistance states are completed. In addition, it has been shown that faster transitions require larger capacitor voltages. Further, the electrical results were used to tune the dynamic memdiode model, which was employed to simulate set and reset processes driven by the capacitor discharges. The model successfully reproduced the measured memristor response to the capacitor discharge.

Idioma originalEnglish
Número d’article108385
Nombre de pàgines8
RevistaSOLID-STATE ELECTRONICS
Volum194
DOIs
Estat de la publicacióPublicada - d’ag. 2022

Fingerprint

Navegar pels temes de recerca de 'Study of TiN/Ti/HfO2/W resistive switching devices: characterization and modeling of the set and reset transitions using an external capacitor discharge'. Junts formen un fingerprint únic.

Com citar-ho