Storing magnetic information in IrMn/MgO/Ta tunnel junctions via field-cooling

D. Petti; E. Albisetti; H. Reichlová; J. Gazquez; M. Varela; M. Molina-Ruiz; A. F. Lopeandía; K. Olejník; V. Novák; I. Fina; B. Dkhil; J. Hayakawa; X. Marti; J. Wunderlich; T. Jungwirth; R. Bertacco

doi:10.1063/1.4804429

Storing magnetic information in IrMn/MgO/Ta tunnel junctions via field-cooling

D. Petti, E. Albisetti, H. Reichlová, J. Gazquez, M. Varela, M. Molina-Ruiz, A. F. Lopeandía, K. Olejník, V. Novák, I. Fina, B. Dkhil, J. Hayakawa, X. Marti, J. Wunderlich, T. Jungwirth, R. Bertacco

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Resum

In this paper, we demonstrate that in Ta/MgO/IrMn tunneling junctions, containing no ferromagnetic elements, distinct metastable resistance states can be set by field cooling the devices from above the Néel temperature (TN) along different orientations. Variations of the resistance up to 10 are found upon field cooling in applied fields, in-plane or out-of-plane. Well below TN, these metastable states are insensitive to magnetic fields up to 2 T, thus constituting robust memory states. Our work provides the demonstration of an electrically readable magnetic memory device, which contains no ferromagnetic elements and stores the information in an antiferromagnetic active layer. © 2013 AIP Publishing LLC.

Idioma original	Anglès
Número d’article	192404
Revista	Applied physics letters
Volum	102
DOIs	https://doi.org/10.1063/1.4804429
Estat de la publicació	Publicada - 13 de maig 2013

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10.1063/1.4804429

https://ddd.uab.cat/record/115962

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https://www.scopus.com/pages/publications/84877978965

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Petti, D., Albisetti, E., Reichlová, H., Gazquez, J., Varela, M., Molina-Ruiz, M., Lopeandía, A. F., Olejník, K., Novák, V., Fina, I., Dkhil, B., Hayakawa, J., Marti, X., Wunderlich, J., Jungwirth, T., & Bertacco, R. (2013). Storing magnetic information in IrMn/MgO/Ta tunnel junctions via field-cooling. Applied physics letters, 102, Article 192404. https://doi.org/10.1063/1.4804429

@article{377db2b9a1914452bcccbebee9161844,

title = "Storing magnetic information in IrMn/MgO/Ta tunnel junctions via field-cooling",

abstract = "In this paper, we demonstrate that in Ta/MgO/IrMn tunneling junctions, containing no ferromagnetic elements, distinct metastable resistance states can be set by field cooling the devices from above the N{\'e}el temperature (TN) along different orientations. Variations of the resistance up to 10 are found upon field cooling in applied fields, in-plane or out-of-plane. Well below TN, these metastable states are insensitive to magnetic fields up to 2 T, thus constituting robust memory states. Our work provides the demonstration of an electrically readable magnetic memory device, which contains no ferromagnetic elements and stores the information in an antiferromagnetic active layer. {\textcopyright} 2013 AIP Publishing LLC.",

author = "D. Petti and E. Albisetti and H. Reichlov{\'a} and J. Gazquez and M. Varela and M. Molina-Ruiz and Lopeand{\'i}a, \{A. F.\} and K. Olejn{\'i}k and V. Nov{\'a}k and I. Fina and B. Dkhil and J. Hayakawa and X. Marti and J. Wunderlich and T. Jungwirth and R. Bertacco",

year = "2013",

month = may,

day = "13",

doi = "10.1063/1.4804429",

language = "English",

volume = "102",

journal = "Applied physics letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

}

TY - JOUR

T1 - Storing magnetic information in IrMn/MgO/Ta tunnel junctions via field-cooling

AU - Petti, D.

AU - Albisetti, E.

AU - Reichlová, H.

AU - Gazquez, J.

AU - Varela, M.

AU - Molina-Ruiz, M.

AU - Lopeandía, A. F.

AU - Olejník, K.

AU - Novák, V.

AU - Fina, I.

AU - Dkhil, B.

AU - Hayakawa, J.

AU - Marti, X.

AU - Wunderlich, J.

AU - Jungwirth, T.

AU - Bertacco, R.

PY - 2013/5/13

Y1 - 2013/5/13

N2 - In this paper, we demonstrate that in Ta/MgO/IrMn tunneling junctions, containing no ferromagnetic elements, distinct metastable resistance states can be set by field cooling the devices from above the Néel temperature (TN) along different orientations. Variations of the resistance up to 10 are found upon field cooling in applied fields, in-plane or out-of-plane. Well below TN, these metastable states are insensitive to magnetic fields up to 2 T, thus constituting robust memory states. Our work provides the demonstration of an electrically readable magnetic memory device, which contains no ferromagnetic elements and stores the information in an antiferromagnetic active layer. © 2013 AIP Publishing LLC.

AB - In this paper, we demonstrate that in Ta/MgO/IrMn tunneling junctions, containing no ferromagnetic elements, distinct metastable resistance states can be set by field cooling the devices from above the Néel temperature (TN) along different orientations. Variations of the resistance up to 10 are found upon field cooling in applied fields, in-plane or out-of-plane. Well below TN, these metastable states are insensitive to magnetic fields up to 2 T, thus constituting robust memory states. Our work provides the demonstration of an electrically readable magnetic memory device, which contains no ferromagnetic elements and stores the information in an antiferromagnetic active layer. © 2013 AIP Publishing LLC.

UR - https://www.scopus.com/pages/publications/84877978965

U2 - 10.1063/1.4804429

DO - 10.1063/1.4804429

M3 - Article

SN - 0003-6951

VL - 102

JO - Applied physics letters

JF - Applied physics letters

M1 - 192404

ER -

Storing magnetic information in IrMn/MgO/Ta tunnel junctions via field-cooling

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