Statistics of Successive Breakdown Events in Gate Oxides

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Idioma original	Anglès
Pàgines (de-a)	272-274
Revista	IEEE Electron Device Letters
Volum	24
DOIs	https://doi.org/10.1109/LED.2003.812139
Estat de la publicació	Publicada - 1 de gen. 2003

Accés al document

@article{53c6a65ed16c4702b79de24604d1607e,

title = "Statistics of Successive Breakdown Events in Gate Oxides",

author = "J. Su{\~n}{\'e} and E. Wu",

year = "2003",

month = jan,

day = "1",

doi = "10.1109/LED.2003.812139",

language = "English",

volume = "24",

pages = "272--274",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - JOUR

T1 - Statistics of Successive Breakdown Events in Gate Oxides

AU - Suñé, J.

AU - Wu, E.

PY - 2003/1/1

Y1 - 2003/1/1

UR - https://www.scopus.com/pages/publications/0038443506

U2 - 10.1109/LED.2003.812139

DO - 10.1109/LED.2003.812139

M3 - Article

SN - 0741-3106

VL - 24

SP - 272

EP - 274

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

ER -