Statistics of soft and hard breakdown in thin SiO2 gate oxides

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17 Cites (Scopus)

Idioma original	Anglès
Pàgines (de-a)	1185-1192
Revista	Microelectronics Reliability
Volum	43
DOIs	https://doi.org/10.1016/S0026-2714(03)00170-7
Estat de la publicació	Publicada - 1 de gen. 2003

Accés al document

@article{9b3b876d51ca43ad9b90c3e792a386ae,

title = "Statistics of soft and hard breakdown in thin SiO2 gate oxides",

author = "J. Su{\~n}{\'e} and E. Wu and D. Jim{\'e}nez and W. Lai",

year = "2003",

month = jan,

day = "1",

doi = "10.1016/S0026-2714(03)00170-7",

language = "English",

volume = "43",

pages = "1185--1192",

journal = "Microelectronics Reliability",

issn = "0026-2714",

publisher = "Elsevier Limited",

}

TY - JOUR

T1 - Statistics of soft and hard breakdown in thin SiO2 gate oxides

AU - Suñé, J.

AU - Wu, E.

AU - Jiménez, D.

AU - Lai, W.

PY - 2003/1/1

Y1 - 2003/1/1

UR - https://www.scopus.com/pages/publications/0041663670

U2 - 10.1016/S0026-2714(03)00170-7

DO - 10.1016/S0026-2714(03)00170-7

M3 - Article

SN - 0026-2714

VL - 43

SP - 1185

EP - 1192

JO - Microelectronics Reliability

JF - Microelectronics Reliability

ER -