Statistics of soft and hard breakdown in thin SiO2 gate oxides

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Idioma original	Anglès
Pàgines (de-a)	1185-1192
Revista	Microelectronics Reliability
Volum	43
DOIs	https://doi.org/10.1016/S0026-2714(03)00170-7
Estat de la publicació	Publicada - 1 de gen. 2003

Accés al document

@article{9b3b876d51ca43ad9b90c3e792a386ae,

title = "Statistics of soft and hard breakdown in thin SiO2 gate oxides",

author = "J. Su{\~n}{\'e} and E. Wu and D. Jim{\'e}nez and W. Lai",

year = "2003",

month = jan,

day = "1",

doi = "10.1016/S0026-2714(03)00170-7",

language = "English",

volume = "43",

pages = "1185--1192",

journal = "Microelectronics Reliability",

issn = "0026-2714",

publisher = "Elsevier Limited",

}