Statistical Characterization of Time-Dependent Variability Defects Using the Maximum Current Fluctuation

P. Saraza-Canflanca, J. Martin-Martinez, R. Castro-Lopez, E. Roca, R. Rodriguez, F. V. Fernandez, M. Nafria

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Resum

This article presents a new methodology to extract, at a given operation condition, the statistical distribution of the number of active defects that contribute to the observed device time-dependent variability, as well as their amplitude distribution. Unlike traditional approaches based on complex and time-consuming individual analysis of thousands of current traces, the proposed approach uses a simpler trace processing, since only the maximum and minimum values of the drain current during a given time interval are needed. Moreover, this extraction method can also estimate defects causing small current shifts, which can be very complex to identify by traditional means. Experimental data in a wide range of gate voltages, from near-threshold up to nominal operation conditions, are analyzed with the proposed methodology.

Idioma originalEnglish
Número d’article9459448
Pàgines (de-a)4039-4044
Nombre de pàgines6
RevistaIEEE Transactions on Electron Devices
Volum68
Número8
Estat de la publicacióPublicada - 1 d’ag. 2021

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