SPICE Compact Modeling of Bipolar/Unipolar Memristor Switching Governed by Electrical Thresholds

Fernando Garcia-Redondo; Robert P. Gowers; Albert Crespo-Yepes; Marisa Lopez-Vallejo; Liudi Jiang

doi:10.1109/TCSI.2016.2564703

SPICE Compact Modeling of Bipolar/Unipolar Memristor Switching Governed by Electrical Thresholds

Fernando Garcia-Redondo, Robert P. Gowers, Albert Crespo-Yepes, Marisa Lopez-Vallejo, Liudi Jiang

Departament d'Enginyeria Electrònica

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63 Cites (Scopus)

Resum

© 2004-2012 IEEE. In this work, we propose a physical memristor/resistive switching device SPICE compact model, that is able to accurately fit both unipolar/bipolar devices settling to its current-voltage relationship. The proposed model is capable of reproducing essential device characteristics such as multilevel storage, temperature dependence, cycle/event handling and even the evolution of variability/parameter degradation with time. The developed compact model has been validated against two physical devices, fitting unipolar and bipolar switching. With no requirement of Verilog-A code, LTSpice, and Spectre simulations reproduce distinctive phenomena such as the preforming state, voltage/cycle dependent random telegraph noise and device degradation.

Idioma original	Anglès
Número d’article	7511783
Pàgines (de-a)	1255-1264
Revista	IEEE Transactions on Circuits and Systems I: Regular Papers
Volum	63
Número	8
DOIs	https://doi.org/10.1109/TCSI.2016.2564703
Estat de la publicació	Publicada - 1 d’ag. 2016

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10.1109/TCSI.2016.2564703

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@article{882a6c2e4f1d474dad14a8ac473e1e7d,

title = "SPICE Compact Modeling of Bipolar/Unipolar Memristor Switching Governed by Electrical Thresholds",

abstract = "{\textcopyright} 2004-2012 IEEE. In this work, we propose a physical memristor/resistive switching device SPICE compact model, that is able to accurately fit both unipolar/bipolar devices settling to its current-voltage relationship. The proposed model is capable of reproducing essential device characteristics such as multilevel storage, temperature dependence, cycle/event handling and even the evolution of variability/parameter degradation with time. The developed compact model has been validated against two physical devices, fitting unipolar and bipolar switching. With no requirement of Verilog-A code, LTSpice, and Spectre simulations reproduce distinctive phenomena such as the preforming state, voltage/cycle dependent random telegraph noise and device degradation.",

keywords = "Circuit simulation, compact model, degradation, memristor, multi-level, ReRAM, RRAM, RTN, SPICE, temperature, variability",

author = "Fernando Garcia-Redondo and Gowers, {Robert P.} and Albert Crespo-Yepes and Marisa Lopez-Vallejo and Liudi Jiang",

year = "2016",

month = aug,

day = "1",

doi = "10.1109/TCSI.2016.2564703",

language = "English",

volume = "63",

pages = "1255--1264",

journal = "IEEE Transactions on Circuits and Systems I: Regular Papers",

issn = "1549-8328",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "8",

}

SPICE Compact Modeling of Bipolar/Unipolar Memristor Switching Governed by Electrical Thresholds. / Garcia-Redondo, Fernando; Gowers, Robert P.; Crespo-Yepes, Albert et al.
In: IEEE Transactions on Circuits and Systems I: Regular Papers, Vol. 63, Núm. 8, 7511783, 01.08.2016, pàg. 1255-1264.

Producció científica: Contribució a revista › Article › Recerca › Avaluat per experts

TY - JOUR

T1 - SPICE Compact Modeling of Bipolar/Unipolar Memristor Switching Governed by Electrical Thresholds

AU - Garcia-Redondo, Fernando

AU - Gowers, Robert P.

AU - Crespo-Yepes, Albert

AU - Lopez-Vallejo, Marisa

AU - Jiang, Liudi

PY - 2016/8/1

Y1 - 2016/8/1

N2 - © 2004-2012 IEEE. In this work, we propose a physical memristor/resistive switching device SPICE compact model, that is able to accurately fit both unipolar/bipolar devices settling to its current-voltage relationship. The proposed model is capable of reproducing essential device characteristics such as multilevel storage, temperature dependence, cycle/event handling and even the evolution of variability/parameter degradation with time. The developed compact model has been validated against two physical devices, fitting unipolar and bipolar switching. With no requirement of Verilog-A code, LTSpice, and Spectre simulations reproduce distinctive phenomena such as the preforming state, voltage/cycle dependent random telegraph noise and device degradation.

AB - © 2004-2012 IEEE. In this work, we propose a physical memristor/resistive switching device SPICE compact model, that is able to accurately fit both unipolar/bipolar devices settling to its current-voltage relationship. The proposed model is capable of reproducing essential device characteristics such as multilevel storage, temperature dependence, cycle/event handling and even the evolution of variability/parameter degradation with time. The developed compact model has been validated against two physical devices, fitting unipolar and bipolar switching. With no requirement of Verilog-A code, LTSpice, and Spectre simulations reproduce distinctive phenomena such as the preforming state, voltage/cycle dependent random telegraph noise and device degradation.

KW - Circuit simulation

KW - compact model

KW - degradation

KW - memristor

KW - multi-level

KW - ReRAM

KW - RRAM

KW - RTN

KW - SPICE

KW - temperature

KW - variability

U2 - 10.1109/TCSI.2016.2564703

DO - 10.1109/TCSI.2016.2564703

M3 - Article

SN - 1549-8328

VL - 63

SP - 1255

EP - 1264

JO - IEEE Transactions on Circuits and Systems I: Regular Papers

JF - IEEE Transactions on Circuits and Systems I: Regular Papers

IS - 8

M1 - 7511783

ER -

SPICE Compact Modeling of Bipolar/Unipolar Memristor Switching Governed by Electrical Thresholds

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