Single-resonator dual-frequency BEOL-embedded CMOS-MEMS oscillator with low-power and ultra-compact TIA core

Martin Riverola; Guillermo Sobreviela; Francesc Torres; Arantxa Uranga; Nuria Barniol

doi:10.1109/LED.2016.2644870

Single-resonator dual-frequency BEOL-embedded CMOS-MEMS oscillator with low-power and ultra-compact TIA core

Martin Riverola, Guillermo Sobreviela, Francesc Torres, Arantxa Uranga, Nuria Barniol

Producció científica: Contribució a revista › Article › Recerca › Avaluat per experts

24 Cites (Scopus)

Resum

© 1980-2012 IEEE. This letter reports on the design and characterization of a dual-frequency oscillator that consist of a reliable seesaw-shaped tungsten resonator integrated in the back end of line of a standard 0.35-μm complementary metal-oxide-semiconductor (CMOS) technology and a high-gain, low power (<10μm) and ultra-compact transimpedance amplifier (TIA) core. The 550-/900-kHz prototyped CMOS-MEMS oscillator can be operated with reduced TIA supply voltage (VDD =1.65 V)) and moderated dc MEMS bias ((VDC =18 V) while consuming only 8.5μW and maintaining satisfactory performance. The measured phase noise is -103.8 dBc/Hz and-99.6 dBc/Hz at 1-kHz offset for the first and second operating frequencies, respectively, which is comparable and competitive with the state of the art.

Idioma original	Anglès
Número d’article	7797162
Pàgines (de-a)	273-276
Revista	IEEE Electron Device Letters
Volum	38
Número	2
DOIs	https://doi.org/10.1109/LED.2016.2644870
Estat de la publicació	Publicada - 1 de febr. 2017

Accés al document

10.1109/LED.2016.2644870

Com citar-ho

@article{061b8ddc2ab8491fae2e219631e7c04f,

title = "Single-resonator dual-frequency BEOL-embedded CMOS-MEMS oscillator with low-power and ultra-compact TIA core",

abstract = "{\textcopyright} 1980-2012 IEEE. This letter reports on the design and characterization of a dual-frequency oscillator that consist of a reliable seesaw-shaped tungsten resonator integrated in the back end of line of a standard 0.35-μm complementary metal-oxide-semiconductor (CMOS) technology and a high-gain, low power (<10μm) and ultra-compact transimpedance amplifier (TIA) core. The 550-/900-kHz prototyped CMOS-MEMS oscillator can be operated with reduced TIA supply voltage (VDD =1.65 V)) and moderated dc MEMS bias ((VDC =18 V) while consuming only 8.5μW and maintaining satisfactory performance. The measured phase noise is -103.8 dBc/Hz and-99.6 dBc/Hz at 1-kHz offset for the first and second operating frequencies, respectively, which is comparable and competitive with the state of the art.",

keywords = "BEOL, CMOS, compactness, low power, MEMS, oscillator, resonator, transimpedance amplifier",

author = "Martin Riverola and Guillermo Sobreviela and Francesc Torres and Arantxa Uranga and Nuria Barniol",

year = "2017",

month = feb,

day = "1",

doi = "10.1109/LED.2016.2644870",

language = "English",

volume = "38",

pages = "273--276",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "2",

}

TY - JOUR

T1 - Single-resonator dual-frequency BEOL-embedded CMOS-MEMS oscillator with low-power and ultra-compact TIA core

AU - Riverola, Martin

AU - Sobreviela, Guillermo

AU - Torres, Francesc

AU - Uranga, Arantxa

AU - Barniol, Nuria

PY - 2017/2/1

Y1 - 2017/2/1

N2 - © 1980-2012 IEEE. This letter reports on the design and characterization of a dual-frequency oscillator that consist of a reliable seesaw-shaped tungsten resonator integrated in the back end of line of a standard 0.35-μm complementary metal-oxide-semiconductor (CMOS) technology and a high-gain, low power (<10μm) and ultra-compact transimpedance amplifier (TIA) core. The 550-/900-kHz prototyped CMOS-MEMS oscillator can be operated with reduced TIA supply voltage (VDD =1.65 V)) and moderated dc MEMS bias ((VDC =18 V) while consuming only 8.5μW and maintaining satisfactory performance. The measured phase noise is -103.8 dBc/Hz and-99.6 dBc/Hz at 1-kHz offset for the first and second operating frequencies, respectively, which is comparable and competitive with the state of the art.

AB - © 1980-2012 IEEE. This letter reports on the design and characterization of a dual-frequency oscillator that consist of a reliable seesaw-shaped tungsten resonator integrated in the back end of line of a standard 0.35-μm complementary metal-oxide-semiconductor (CMOS) technology and a high-gain, low power (<10μm) and ultra-compact transimpedance amplifier (TIA) core. The 550-/900-kHz prototyped CMOS-MEMS oscillator can be operated with reduced TIA supply voltage (VDD =1.65 V)) and moderated dc MEMS bias ((VDC =18 V) while consuming only 8.5μW and maintaining satisfactory performance. The measured phase noise is -103.8 dBc/Hz and-99.6 dBc/Hz at 1-kHz offset for the first and second operating frequencies, respectively, which is comparable and competitive with the state of the art.

KW - BEOL

KW - CMOS

KW - compactness

KW - low power

KW - MEMS

KW - oscillator

KW - resonator

KW - transimpedance amplifier

U2 - 10.1109/LED.2016.2644870

DO - 10.1109/LED.2016.2644870

M3 - Article

SN - 0741-3106

VL - 38

SP - 273

EP - 276

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 2

M1 - 7797162

ER -

Single-resonator dual-frequency BEOL-embedded CMOS-MEMS oscillator with low-power and ultra-compact TIA core

Resum

Accés al document

Fingerprint

Com citar-ho