Simulation of the hot-carrier degradation in short channel transistors with high-K dielectric

E. Amat; T. Kauerauf; R. Degraeve; R. Rodríguez; M. Nafría; X. Aymerich; G. Groeseneken

doi:10.1002/jnm.750

Simulation of the hot-carrier degradation in short channel transistors with high-K dielectric

E. Amat, T. Kauerauf, R. Degraeve, R. Rodríguez, M. Nafría, X. Aymerich, G. Groeseneken

Departament d'Enginyeria Electrònica

Producció científica: Contribució a revista › Article › Recerca

2 Cites (Scopus)

Idioma original	Anglès
Pàgines (de-a)	315-323
Revista	International journal of numerical modelling (Print)
Volum	23
Número	4-5
DOIs	https://doi.org/10.1002/jnm.750
Estat de la publicació	Publicada - 1 de juny 2010

Accés al document

10.1002/jnm.750

Altres arxius i enllaços

https://www.scopus.com/pages/publications/77955453563

Com citar-ho

@article{71c7596332c84edfad6ac64c2120048c,

title = "Simulation of the hot-carrier degradation in short channel transistors with high-K dielectric",

author = "E. Amat and T. Kauerauf and R. Degraeve and R. Rodr{\'i}guez and M. Nafr{\'i}a and X. Aymerich and G. Groeseneken",

year = "2010",

month = jun,

day = "1",

doi = "10.1002/jnm.750",

language = "English",

volume = "23",

pages = "315--323",

journal = "International journal of numerical modelling (Print)",

issn = "0894-3370",

publisher = "John Wiley and Sons Ltd",

number = "4-5",

}

TY - JOUR

T1 - Simulation of the hot-carrier degradation in short channel transistors with high-K dielectric

AU - Amat, E.

AU - Kauerauf, T.

AU - Degraeve, R.

AU - Rodríguez, R.

AU - Nafría, M.

AU - Aymerich, X.

AU - Groeseneken, G.

PY - 2010/6/1

Y1 - 2010/6/1

UR - https://www.scopus.com/pages/publications/77955453563

U2 - 10.1002/jnm.750

DO - 10.1002/jnm.750

M3 - Article

SN - 0894-3370

VL - 23

SP - 315

EP - 323

JO - International journal of numerical modelling (Print)

JF - International journal of numerical modelling (Print)

IS - 4-5

ER -