TY - BOOK
T1 - Schottky barrier height extraction of multi-channel one-dimensional FETs
AU - Pacheco Sanchez, Anibal Uriel
AU - Ramirez-Garcia, Eloy
AU - Enciso-Aguilar, Mauro A
AU - Jimenez Jimenez, David
PY - 2020/2/25
Y1 - 2020/2/25
N2 - The Schottky barrier height of fabricated multi-wire and multi-carbon-nanotube field-effect transistors is characterized here with an extraction method based on the Landauer-Biittiker equation. A comparison with results obtained with an extraction method not considering the quasi-ballistic transport in these devices shows that the latter underestimates the barrier height. Issues on the extraction due to non-uniform interfaces are pointed out and further studied and described by a numerical device simulator
AB - The Schottky barrier height of fabricated multi-wire and multi-carbon-nanotube field-effect transistors is characterized here with an extraction method based on the Landauer-Biittiker equation. A comparison with results obtained with an extraction method not considering the quasi-ballistic transport in these devices shows that the latter underestimates the barrier height. Issues on the extraction due to non-uniform interfaces are pointed out and further studied and described by a numerical device simulator
UR - http://dx.doi.org/10.1109/laedc49063.2020.9072959
UR - https://www.scopus.com/pages/publications/85084976062
U2 - 10.1109/laedc49063.2020.9072959
DO - 10.1109/laedc49063.2020.9072959
M3 - Proceeding
SN - 978-1-7281-1045-5
T3 - 2020 IEEE Latin America Electron Devices Conference (LAEDC)
BT - Schottky barrier height extraction of multi-channel one-dimensional FETs
ER -