Reversible dielectric breakdown in ultrathin Hf based high-k stacks under current-limited stresses

R. Rodriguez; A. Crespo-Yepes; X. Aymerich; M. Nafria; J. Martin-Martinez

doi:10.1016/j.microrel.2009.06.029

Reversible dielectric breakdown in ultrathin Hf based high-k stacks under current-limited stresses

R. Rodriguez, A. Crespo-Yepes, X. Aymerich, M. Nafria, J. Martin-Martinez

Departament d'Enginyeria Electrònica

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The effects of a current-limited breakdown (BD) on the post-BD current of MOS capacitors with a thin high-k dielectric stack have been analysed. A strong current reduction after BD and, consequently, a partial recovery of the insulating properties of the dielectric stack is observed. The similarities with the resistive switching phenomenon observed in MIM structures for memory applications are discussed. © 2009 Elsevier Ltd. All rights reserved.

Idioma original	Anglès
Pàgines (de-a)	1024-1028
Revista	Microelectronics Reliability
Volum	49
DOIs	https://doi.org/10.1016/j.microrel.2009.06.029
Estat de la publicació	Publicada - 1 de set. 2009

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10.1016/j.microrel.2009.06.029

https://ddd.uab.cat/record/138452

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abstract = "The effects of a current-limited breakdown (BD) on the post-BD current of MOS capacitors with a thin high-k dielectric stack have been analysed. A strong current reduction after BD and, consequently, a partial recovery of the insulating properties of the dielectric stack is observed. The similarities with the resistive switching phenomenon observed in MIM structures for memory applications are discussed. {\textcopyright} 2009 Elsevier Ltd. All rights reserved.",

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AU - Crespo-Yepes, A.

AU - Aymerich, X.

AU - Nafria, M.

AU - Martin-Martinez, J.

PY - 2009/9/1

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N2 - The effects of a current-limited breakdown (BD) on the post-BD current of MOS capacitors with a thin high-k dielectric stack have been analysed. A strong current reduction after BD and, consequently, a partial recovery of the insulating properties of the dielectric stack is observed. The similarities with the resistive switching phenomenon observed in MIM structures for memory applications are discussed. © 2009 Elsevier Ltd. All rights reserved.

AB - The effects of a current-limited breakdown (BD) on the post-BD current of MOS capacitors with a thin high-k dielectric stack have been analysed. A strong current reduction after BD and, consequently, a partial recovery of the insulating properties of the dielectric stack is observed. The similarities with the resistive switching phenomenon observed in MIM structures for memory applications are discussed. © 2009 Elsevier Ltd. All rights reserved.

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DO - 10.1016/j.microrel.2009.06.029

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JO - Microelectronics Reliability

JF - Microelectronics Reliability

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Reversible dielectric breakdown in ultrathin Hf based high-k stacks under current-limited stresses

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