Resonant tunnel switching in MISS devices

J. Millán; F. Serra-Mestres; X. Aymerich-Humet

doi:10.1016/0038-1101(82)90057-0

Resonant tunnel switching in MISS devices

J. Millán, F. Serra-Mestres, X. Aymerich-Humet

Departament de Física

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Resum

The excess current experimentally observed in the Metal-Thin SiO2 layer (n or p) Si(p+ or n+) (MISS) structures cannot be explained by any of the existing models based on a direct tunneling conduction through the insulator. In this paper we consider the existence of traps in the SiO2 gap which support resonant tunneling conduction through the insulator. This allows to fit the experimental I-V characteristic of our structures with a reasonable agreement. The switching point dependences on the structure parameters are shown. © 1982.

Idioma original	Anglès
Pàgines (de-a)	565-569
Revista	Solid State Electronics
Volum	25
DOIs	https://doi.org/10.1016/0038-1101(82)90057-0
Estat de la publicació	Publicada - 1 de gen. 1982

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10.1016/0038-1101(82)90057-0

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@article{50df01d58a1a4238ad464e62614639e9,

title = "Resonant tunnel switching in MISS devices",

abstract = "The excess current experimentally observed in the Metal-Thin SiO2 layer (n or p) Si(p+ or n+) (MISS) structures cannot be explained by any of the existing models based on a direct tunneling conduction through the insulator. In this paper we consider the existence of traps in the SiO2 gap which support resonant tunneling conduction through the insulator. This allows to fit the experimental I-V characteristic of our structures with a reasonable agreement. The switching point dependences on the structure parameters are shown. {\textcopyright} 1982.",

author = "J. Mill{\'a}n and F. Serra-Mestres and X. Aymerich-Humet",

year = "1982",

month = jan,

day = "1",

doi = "10.1016/0038-1101(82)90057-0",

language = "English",

volume = "25",

pages = "565--569",

journal = "Solid State Electronics",

issn = "0038-1101",

publisher = "Elsevier Limited",

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TY - JOUR

T1 - Resonant tunnel switching in MISS devices

AU - Millán, J.

AU - Serra-Mestres, F.

AU - Aymerich-Humet, X.

PY - 1982/1/1

Y1 - 1982/1/1

N2 - The excess current experimentally observed in the Metal-Thin SiO2 layer (n or p) Si(p+ or n+) (MISS) structures cannot be explained by any of the existing models based on a direct tunneling conduction through the insulator. In this paper we consider the existence of traps in the SiO2 gap which support resonant tunneling conduction through the insulator. This allows to fit the experimental I-V characteristic of our structures with a reasonable agreement. The switching point dependences on the structure parameters are shown. © 1982.

AB - The excess current experimentally observed in the Metal-Thin SiO2 layer (n or p) Si(p+ or n+) (MISS) structures cannot be explained by any of the existing models based on a direct tunneling conduction through the insulator. In this paper we consider the existence of traps in the SiO2 gap which support resonant tunneling conduction through the insulator. This allows to fit the experimental I-V characteristic of our structures with a reasonable agreement. The switching point dependences on the structure parameters are shown. © 1982.

U2 - 10.1016/0038-1101(82)90057-0

DO - 10.1016/0038-1101(82)90057-0

M3 - Article

SN - 0038-1101

VL - 25

SP - 565

EP - 569

JO - Solid State Electronics

JF - Solid State Electronics

ER -

Resonant tunnel switching in MISS devices

Resum

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