Resistive switching like-behavior in MOSFETs with ultra-thin HfSiON dielectric gate stack: pMOS and nMOS comparison and reliability implications

A. Crespo-Yepes; R. Rodríguez; M. Nafría; X. Aymerich; Javier Martin Martinez

doi:10.1016/j.microrel.2013.07.046

Resistive switching like-behavior in MOSFETs with ultra-thin HfSiON dielectric gate stack: pMOS and nMOS comparison and reliability implications

A. Crespo-Yepes, R. Rodríguez, M. Nafría, X. Aymerich, Javier Martin Martinez

Departament d'Enginyeria Electrònica

Producció científica: Contribució a revista › Article › Recerca

Idioma original	Anglès
Pàgines (de-a)	1247-1251
Revista	MICROELECTRONICS RELIABILITY
Volum	53
DOIs	https://doi.org/10.1016/j.microrel.2013.07.046
Estat de la publicació	Publicada - 1 de gen. 2013

Accés al document

10.1016/j.microrel.2013.07.046

https://ddd.uab.cat/record/136864

Com citar-ho

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title = "Resistive switching like-behavior in MOSFETs with ultra-thin HfSiON dielectric gate stack: pMOS and nMOS comparison and reliability implications",

author = "A. Crespo-Yepes and R. Rodr{\'i}guez and M. Nafr{\'i}a and X. Aymerich and {Martin Martinez}, Javier",

year = "2013",

month = jan,

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doi = "10.1016/j.microrel.2013.07.046",

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pages = "1247--1251",

journal = "MICROELECTRONICS RELIABILITY",

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T1 - Resistive switching like-behavior in MOSFETs with ultra-thin HfSiON dielectric gate stack: pMOS and nMOS comparison and reliability implications

AU - Crespo-Yepes, A.

AU - Rodríguez, R.

AU - Nafría, M.

AU - Aymerich, X.

AU - Martin Martinez, Javier

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