Resistive switching like-behavior in FD-SOI Ω-gate transistors

C. Valdivieso*, R. Rodriguez, A. Crespo-Yepes, J. Martin-Martinez, M. Nafria

*Autor corresponent d’aquest treball

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Resum

In this work, the Resistive switching (RS) phenomenon is experimentally investigated in N-type FDSOI Ω-gate NW-FETs with high-k dielectric. The location along the channel of the conductive filament through the device dielectric during switching is analyzed. Finally, the effects of RS on the characteristic transistor curves are also presented.

Idioma originalEnglish
Número d’article108759
Nombre de pàgines3
RevistaSOLID-STATE ELECTRONICS
Volum209
DOIs
Estat de la publicacióPublicada - de nov. 2023

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