Resistive switching like-behavior in FD-SOI Ω-gate transistors

C. Valdivieso; R. Rodriguez; A. Crespo-Yepes; J. Martin-Martinez; M. Nafria

doi:10.1016/j.sse.2023.108759

Resistive switching like-behavior in FD-SOI Ω-gate transistors

C. Valdivieso^*, R. Rodriguez, A. Crespo-Yepes, J. Martin-Martinez, M. Nafria

^*Autor corresponent d’aquest treball

Universitat Autònoma de Barcelona (UAB)

Producció científica: Contribució a revista › Article › Recerca › Avaluat per experts

2 Cites (Scopus)

1 Descàrregues (Pure)

Resum

In this work, the Resistive switching (RS) phenomenon is experimentally investigated in N-type FDSOI Ω-gate NW-FETs with high-k dielectric. The location along the channel of the conductive filament through the device dielectric during switching is analyzed. Finally, the effects of RS on the characteristic transistor curves are also presented.

Idioma original	Anglès
Número d’article	108759
Nombre de pàgines	3
Revista	SOLID-STATE ELECTRONICS
Volum	209
DOIs	https://doi.org/10.1016/j.sse.2023.108759
Estat de la publicació	Publicada - de nov. 2023

Accés al document

10.1016/j.sse.2023.108759

https://ddd.uab.cat/record/283391

Altres arxius i enllaços

Com citar-ho

@article{abef4d13f7b74fca99e741d85439ba69,

title = "Resistive switching like-behavior in FD-SOI Ω-gate transistors",

abstract = "In this work, the Resistive switching (RS) phenomenon is experimentally investigated in N-type FDSOI Ω-gate NW-FETs with high-k dielectric. The location along the channel of the conductive filament through the device dielectric during switching is analyzed. Finally, the effects of RS on the characteristic transistor curves are also presented.",

keywords = "FD-SOI, Nanowires, Resistive switching",

author = "C. Valdivieso and R. Rodriguez and A. Crespo-Yepes and J. Martin-Martinez and M. Nafria",

note = "Publisher Copyright: {\textcopyright} 2023",

year = "2023",

month = nov,

doi = "10.1016/j.sse.2023.108759",

language = "English",

volume = "209",

journal = "SOLID-STATE ELECTRONICS",

issn = "0038-1101",

publisher = "Elsevier Limited",

}

TY - JOUR

T1 - Resistive switching like-behavior in FD-SOI Ω-gate transistors

AU - Valdivieso, C.

AU - Rodriguez, R.

AU - Crespo-Yepes, A.

AU - Martin-Martinez, J.

AU - Nafria, M.

PY - 2023/11

Y1 - 2023/11

N2 - In this work, the Resistive switching (RS) phenomenon is experimentally investigated in N-type FDSOI Ω-gate NW-FETs with high-k dielectric. The location along the channel of the conductive filament through the device dielectric during switching is analyzed. Finally, the effects of RS on the characteristic transistor curves are also presented.

AB - In this work, the Resistive switching (RS) phenomenon is experimentally investigated in N-type FDSOI Ω-gate NW-FETs with high-k dielectric. The location along the channel of the conductive filament through the device dielectric during switching is analyzed. Finally, the effects of RS on the characteristic transistor curves are also presented.

KW - FD-SOI

KW - Nanowires

KW - Resistive switching

UR - http://www.scopus.com/inward/record.url?scp=85171438078&partnerID=8YFLogxK

UR - https://www.mendeley.com/catalogue/b6cf130f-f50a-3b2e-87f1-c9dbf414009d/

U2 - 10.1016/j.sse.2023.108759

DO - 10.1016/j.sse.2023.108759

M3 - Article

AN - SCOPUS:85171438078

SN - 0038-1101

VL - 209

JO - SOLID-STATE ELECTRONICS

JF - SOLID-STATE ELECTRONICS

M1 - 108759

ER -

Resistive switching like-behavior in FD-SOI Ω-gate transistors

Resum

Accés al document

Altres arxius i enllaços

Fingerprint

Com citar-ho