TY - JOUR
T1 - Resistive switching in CeO2/La0.8Sr0.2MnO3 bilayer for non-volatile memory applications
AU - Ortega-Hernandez, R.
AU - Coll, M.
AU - Gonzalez-Rosillo, J.
AU - Palau, A.
AU - Obradors, X.
AU - Miranda, E.
AU - Puig, T.
AU - Suñe, J.
PY - 2015/11/1
Y1 - 2015/11/1
N2 - © 2015 Elsevier B.V. All rights reserved. The resistive switching of CeO2-x/La0.8Sr0.2MnO3 bilayer structures has been studied. First, the resistive switching (RS) characteristics of La0.8Sr0.2MnO3 (LSMO) and the CeO2-x layers are studied separately. Then, the bilayer characteristics are analyzed. It has been demonstrated that inserting a thin CeO2-x layer between the LSMO film and the metal electrodes deeply modifies the resistive switching characteristics. The metal-insulator transition of the LSMO layer results from the oxygen diffusion in and out of the film. These effects are enhanced through the introduction of the CeO2-x layer due to the fact it acts as an oxygen reservoir.
AB - © 2015 Elsevier B.V. All rights reserved. The resistive switching of CeO2-x/La0.8Sr0.2MnO3 bilayer structures has been studied. First, the resistive switching (RS) characteristics of La0.8Sr0.2MnO3 (LSMO) and the CeO2-x layers are studied separately. Then, the bilayer characteristics are analyzed. It has been demonstrated that inserting a thin CeO2-x layer between the LSMO film and the metal electrodes deeply modifies the resistive switching characteristics. The metal-insulator transition of the LSMO layer results from the oxygen diffusion in and out of the film. These effects are enhanced through the introduction of the CeO2-x layer due to the fact it acts as an oxygen reservoir.
KW - CeO 2- x
KW - LSMO
KW - Non-volatile memory
KW - Resistive switching
KW - RRAM
UR - https://www.scopus.com/pages/publications/84927721805
U2 - 10.1016/j.mee.2015.04.042
DO - 10.1016/j.mee.2015.04.042
M3 - Article
SN - 0167-9317
VL - 147
SP - 37
EP - 40
JO - Microelectronic Engineering
JF - Microelectronic Engineering
M1 - 9865
ER -