Resistive switching in CeO<inf>2</inf>/La<inf>0.8</inf>Sr<inf>0.2</inf>MnO<inf>3</inf> bilayer for non-volatile memory applications

R. Ortega-Hernandez; M. Coll; J. Gonzalez-Rosillo; A. Palau; X. Obradors; E. Miranda; T. Puig; J. Suñe

doi:10.1016/j.mee.2015.04.042

Resistive switching in CeO<inf>2</inf>/La<inf>0.8</inf>Sr<inf>0.2</inf>MnO<inf>3</inf> bilayer for non-volatile memory applications

R. Ortega-Hernandez, M. Coll, J. Gonzalez-Rosillo, A. Palau, X. Obradors, E. Miranda, T. Puig, J. Suñe

Departament d'Enginyeria Electrònica

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© 2015 Elsevier B.V. All rights reserved. The resistive switching of CeO2-x/La0.8Sr0.2MnO3 bilayer structures has been studied. First, the resistive switching (RS) characteristics of La0.8Sr0.2MnO3 (LSMO) and the CeO2-x layers are studied separately. Then, the bilayer characteristics are analyzed. It has been demonstrated that inserting a thin CeO2-x layer between the LSMO film and the metal electrodes deeply modifies the resistive switching characteristics. The metal-insulator transition of the LSMO layer results from the oxygen diffusion in and out of the film. These effects are enhanced through the introduction of the CeO2-x layer due to the fact it acts as an oxygen reservoir.

Idioma original	Anglès
Número d’article	9865
Pàgines (de-a)	37-40
Revista	Microelectronic Engineering
Volum	147
DOIs	https://doi.org/10.1016/j.mee.2015.04.042
Estat de la publicació	Publicada - 1 de nov. 2015

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10.1016/j.mee.2015.04.042

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@article{5b4381a2d0854ef580f3616175d33c4e,

title = "Resistive switching in CeO2/La0.8Sr0.2MnO3 bilayer for non-volatile memory applications",

abstract = "{\textcopyright} 2015 Elsevier B.V. All rights reserved. The resistive switching of CeO2-x/La0.8Sr0.2MnO3 bilayer structures has been studied. First, the resistive switching (RS) characteristics of La0.8Sr0.2MnO3 (LSMO) and the CeO2-x layers are studied separately. Then, the bilayer characteristics are analyzed. It has been demonstrated that inserting a thin CeO2-x layer between the LSMO film and the metal electrodes deeply modifies the resistive switching characteristics. The metal-insulator transition of the LSMO layer results from the oxygen diffusion in and out of the film. These effects are enhanced through the introduction of the CeO2-x layer due to the fact it acts as an oxygen reservoir.",

keywords = "CeO 2- x, LSMO, Non-volatile memory, Resistive switching, RRAM",

author = "R. Ortega-Hernandez and M. Coll and J. Gonzalez-Rosillo and A. Palau and X. Obradors and E. Miranda and T. Puig and J. Su{\~n}e",

year = "2015",

month = nov,

day = "1",

doi = "10.1016/j.mee.2015.04.042",

language = "English",

volume = "147",

pages = "37--40",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier",

}

TY - JOUR

T1 - Resistive switching in CeO2/La0.8Sr0.2MnO3 bilayer for non-volatile memory applications

AU - Ortega-Hernandez, R.

AU - Coll, M.

AU - Gonzalez-Rosillo, J.

AU - Palau, A.

AU - Obradors, X.

AU - Miranda, E.

AU - Puig, T.

AU - Suñe, J.

PY - 2015/11/1

Y1 - 2015/11/1

N2 - © 2015 Elsevier B.V. All rights reserved. The resistive switching of CeO2-x/La0.8Sr0.2MnO3 bilayer structures has been studied. First, the resistive switching (RS) characteristics of La0.8Sr0.2MnO3 (LSMO) and the CeO2-x layers are studied separately. Then, the bilayer characteristics are analyzed. It has been demonstrated that inserting a thin CeO2-x layer between the LSMO film and the metal electrodes deeply modifies the resistive switching characteristics. The metal-insulator transition of the LSMO layer results from the oxygen diffusion in and out of the film. These effects are enhanced through the introduction of the CeO2-x layer due to the fact it acts as an oxygen reservoir.

AB - © 2015 Elsevier B.V. All rights reserved. The resistive switching of CeO2-x/La0.8Sr0.2MnO3 bilayer structures has been studied. First, the resistive switching (RS) characteristics of La0.8Sr0.2MnO3 (LSMO) and the CeO2-x layers are studied separately. Then, the bilayer characteristics are analyzed. It has been demonstrated that inserting a thin CeO2-x layer between the LSMO film and the metal electrodes deeply modifies the resistive switching characteristics. The metal-insulator transition of the LSMO layer results from the oxygen diffusion in and out of the film. These effects are enhanced through the introduction of the CeO2-x layer due to the fact it acts as an oxygen reservoir.

KW - CeO 2- x

KW - LSMO

KW - Non-volatile memory

KW - Resistive switching

KW - RRAM

U2 - 10.1016/j.mee.2015.04.042

DO - 10.1016/j.mee.2015.04.042

M3 - Article

SN - 0167-9317

VL - 147

SP - 37

EP - 40

JO - Microelectronic Engineering

JF - Microelectronic Engineering

M1 - 9865

ER -

Resistive switching in CeO<inf>2</inf>/La<inf>0.8</inf>Sr<inf>0.2</inf>MnO<inf>3</inf> bilayer for non-volatile memory applications

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