Reliably straining suspended van der Waals heterostructures

Daniele Nazzari, Jakob Genser, Masiar Sistani, Maximilian G. Bartmann, Xavier Cartoixà , Riccardo Rurali, Walter M. Weber, Alois Lugstein

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1 Citació (Scopus)
1 Descàrregues (Pure)

Resum

2D materials provide a rapidly expanding platform for the observation of novel physical phenomena and for the realization of cuttingedge optoelectronic devices. In addition to their peculiar individual characteristics, 2D materials can be stacked into complex van der Waals
heterostructures, greatly expanding their potential. Moreover, thanks to their excellent stretchability, strain can be used as a powerful control
knob to tune or boost many of their properties. Here, we present a novel method to reliably and repeatedly apply a high uniaxial tensile strain
to suspended van der Waals heterostructures. The reported device is engineered starting from a silicon-on-insulator substrate, allowing for
the realization of suspended silicon beams that can amplify the applied strain. The strain module functionality is demonstrated using singleand double-layer graphene layers stacked with a multilayered hexagonal boron nitride flake. The heterostructures can be uniaxially strained,
respectively, up to ∼1.2% and ∼1.8%.
Idioma originalAnglès
Número d’article111123
Nombre de pàgines7
RevistaAPL Materials
Volum11
Número11
DOIs
Estat de la publicacióPublicada - 1 de nov. 2023

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