Reliability and gate conduction variability of HfO2-based MOS devices: a combined nanoscale and device level study.

A. Bayerl; M. Lanza; M. Porti; F. Campabadal; M. Nafría; X. Aymerich; G. Benstetter

doi:10.1016/j.mee.2011.03.122

Reliability and gate conduction variability of HfO2-based MOS devices: a combined nanoscale and device level study.

A. Bayerl, M. Lanza, M. Porti, F. Campabadal, M. Nafría, X. Aymerich, G. Benstetter

Departament d'Enginyeria Electrònica

Producció científica: Contribució a revista › Article › Recerca › Avaluat per experts

6 Cites (Scopus)

Idioma original	Anglès
Pàgines (de-a)	1334-1337
Revista	Microelectronic Engineering
Volum	88
Número	7
DOIs	https://doi.org/10.1016/j.mee.2011.03.122
Estat de la publicació	Publicada - 1 de gen. 2011

Accés al document

10.1016/j.mee.2011.03.122

Altres arxius i enllaços

https://www.scopus.com/pages/publications/79958058735

Com citar-ho

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title = "Reliability and gate conduction variability of HfO2-based MOS devices: a combined nanoscale and device level study.",

author = "A. Bayerl and M. Lanza and M. Porti and F. Campabadal and M. Nafr{\'i}a and X. Aymerich and G. Benstetter",

year = "2011",

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day = "1",

doi = "10.1016/j.mee.2011.03.122",

language = "English",

volume = "88",

pages = "1334--1337",

journal = "Microelectronic Engineering",

issn = "0167-9317",

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T1 - Reliability and gate conduction variability of HfO2-based MOS devices: a combined nanoscale and device level study.

AU - Bayerl, A.

AU - Lanza, M.

AU - Porti, M.

AU - Campabadal, F.

AU - Nafría, M.

AU - Aymerich, X.

AU - Benstetter, G.

PY - 2011/1/1

Y1 - 2011/1/1

UR - https://www.scopus.com/pages/publications/79958058735

U2 - 10.1016/j.mee.2011.03.122

DO - 10.1016/j.mee.2011.03.122

M3 - Article

SN - 0167-9317

VL - 88

SP - 1334

EP - 1337

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 7

ER -