TY - JOUR
T1 - Relation between degradation and breakdown of thin SiO2 films under AC stress conditions
AU - Nafría, M.
AU - Yélamos, D.
AU - Suñé, J.
AU - Aymerich, X.
PY - 1995/1/1
Y1 - 1995/1/1
N2 - MOS capacitors have been subjected to bipolar voltage waveforms of different amplitudes and frequencies. The current density measured under a DC low-value gate voltage is taken as an indicator of the oxide degradation level, so that its evolution is taken as a measure of the progressive wearout of the oxide. The data suggest lower degradation levels, for the same stress times, at high frequencies. This is consistent with the increase of the time-to-breakdown with frequency and confirms that, also for dynamic stresses, the relation between degradation and breakdown is fundamental to understand the physics of dielectric breakdown. © 1995.
AB - MOS capacitors have been subjected to bipolar voltage waveforms of different amplitudes and frequencies. The current density measured under a DC low-value gate voltage is taken as an indicator of the oxide degradation level, so that its evolution is taken as a measure of the progressive wearout of the oxide. The data suggest lower degradation levels, for the same stress times, at high frequencies. This is consistent with the increase of the time-to-breakdown with frequency and confirms that, also for dynamic stresses, the relation between degradation and breakdown is fundamental to understand the physics of dielectric breakdown. © 1995.
U2 - 10.1016/0167-9317(95)00067-I
DO - 10.1016/0167-9317(95)00067-I
M3 - Article
SN - 0167-9317
VL - 28
SP - 321
EP - 324
JO - Microelectronic Engineering
JF - Microelectronic Engineering
ER -