Saltar a la navegació principal Saltar a la cerca Vés al contingut principal

Reduction of the thermal conductivity in free-standing silicon nano-membranes investigated by non-invasive Raman thermometry

E. Chávez-Ángel, J. S. Reparaz, J. Gomis-Bresco, M. R. Wagner, J. Cuffe, B. Graczykowski, A. Shchepetov, H. Jiang, M. Prunnila, J. Ahopelto, F. Alzina, C. M. Sotomayor Torres

    Producció científica: Contribució a revistaArticleRecercaAvaluat per experts

    Resum

    We report on the reduction of the thermal conductivity in ultra-thin suspended Si membranes with high crystalline quality. A series of membranes with thicknesses ranging from 9 nm to 1.5 μm was investigated using Raman thermometry, a novel contactless technique for thermal conductivity determination. A systematic decrease in the thermal conductivity was observed as reducing the thickness, which is explained using the Fuchs-Sondheimer model through the influence of phonon boundary scattering at the surfaces. The thermal conductivity of the thinnest membrane with d = 9 nm resulted in (9 ± 2) W/mK, thus approaching the amorphous limit but still maintaining a high crystalline quality. © 2014 Author(s).
    Idioma originalAnglès
    Número d’article012113
    RevistaAPL Materials
    Volum2
    Número1
    DOIs
    Estat de la publicacióPublicada - 1 de gen. 2014

    Fingerprint

    Navegar pels temes de recerca de 'Reduction of the thermal conductivity in free-standing silicon nano-membranes investigated by non-invasive Raman thermometry'. Junts formen un fingerprint únic.

    Com citar-ho