Resum
We report on the reduction of the thermal conductivity in ultra-thin suspended Si membranes with high crystalline quality. A series of membranes with thicknesses ranging from 9 nm to 1.5 μm was investigated using Raman thermometry, a novel contactless technique for thermal conductivity determination. A systematic decrease in the thermal conductivity was observed as reducing the thickness, which is explained using the Fuchs-Sondheimer model through the influence of phonon boundary scattering at the surfaces. The thermal conductivity of the thinnest membrane with d = 9 nm resulted in (9 ± 2) W/mK, thus approaching the amorphous limit but still maintaining a high crystalline quality. © 2014 Author(s).
| Idioma original | Anglès |
|---|---|
| Número d’article | 012113 |
| Revista | APL Materials |
| Volum | 2 |
| Número | 1 |
| DOIs | |
| Estat de la publicació | Publicada - 1 de gen. 2014 |
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